STGW39NC60VD

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STGW39NC60VD

IGBT 600V 80A 250W TO247

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Spécifications

Package Tube
Series PowerMESH™
ProductStatus Active
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 80 A
Current-CollectorPulsed(Icm) 220 A
Vce(on)(Max)@VgeIc 2.4V @ 15V, 30A
Power-Max 250 W
SwitchingEnergy 333µJ (on), 537µJ (off)
InputType Standard
GateCharge 126 nC
Td(on/off)@25°C 33ns/178ns
TestCondition 390V, 30A, 10Ohm, 15V
ReverseRecoveryTime(trr) 45 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Vue d'ensemble

Description

The STGW39NC60VD is a high-voltage N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) produced by STMicroelectronics. Designed for power applications, it features a breakdown voltage of 600V, making it suitable for high-voltage environments like power supplies, motor drives, and energy conversion systems.
Key specifications include a maximum continuous drain current of 39A and a low on-resistance (RDS(on)), which enhances efficiency by minimizing power losses during operation. The device is housed in a TO-247 package, facilitating effective thermal management.
The STGW39NC60VD is optimized for faster switching speeds, which is advantageous in applications requiring high-frequency operation. Its robust design also provides protection against overvoltage and thermal runaway, ensuring reliability in demanding conditions. Overall, this MOSFET is ideal for engineers looking for high-performance components in industrial and automotive applications where efficiency and reliability are critical.

Features

The STGW39NC60VD is a high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for various power applications. Key features include:
1. Voltage Rating: 600V, suitable for high-voltage operations.
2. Current Rating: Capable of handling continuous currents up to 39A, making it suitable for industrial applications.
3. Low Saturation Voltage: Offers a low VCE(sat) for improved efficiency and reduced power losses.
4. Fast Switching: Designed for rapid switching applications, enhancing performance in inverter and converter circuits.
5. Robust Thermal Performance: Features a high thermal conductivity for better heat dissipation, extending operational life.
6. Easy to Drive: Simplified gate drive requirements facilitate integration into various circuits.
7. Package Type: Typically available in a TO-247 package, allowing for effective heat sinking.
These features make the STGW39NC60VD ideal for use in motor drives, UPS systems, and other power electronic applications.

Package

The STGW39NC60VD is typically packaged in a TO-247 package type. This package is designed for high power applications, providing good thermal performance and ease of mounting.

Pinout

The STGW39NC60VD is an N-channel MOSFET designed for power applications. It typically comes in a TO-247 package, which has three pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows the MOSFET to conduct between the drain and source.

2. Drain (D): This is the terminal through which the main current flows. It is connected to the load in a circuit.
3. Source (S): This pin serves as the return path for the current. It is connected to the ground or the negative side of the power supply in typical configurations.
The STGW39NC60VD is rated for high voltage (600V) and high current (39A), making it suitable for applications such as power supplies and converters.

Manufacturer

The STGW39NC60VD is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in the design, development, and manufacture of a wide range of semiconductor products, including power transistors, microcontrollers, and sensors. The company serves various markets, including automotive, industrial, personal electronics, and communication equipment. STMicroelectronics is renowned for its expertise in power management and energy efficiency solutions, making it a key player in the semiconductor industry.

Application

The STGW39NC60VD is a fast-switching N-channel IGBT (Insulated Gate Bipolar Transistor) primarily used in power electronics applications. Its key areas include industrial motor drives, power inverters for renewable energy systems (like solar and wind), uninterruptible power supplies (UPS), and induction heating. Due to its capability to handle high voltages and currents, it is suitable for applications requiring efficient power conversion and control.

Equivalent

The STGW39NC60VD is a 600V, 39A N-channel IGBT. Equivalent products include the Infineon IGBT series (e.g., IKW39N60T), the Mitsubishi MGF60N60, and the ON Semiconductor NGTB39N60. Always verify specific ratings and characteristics for compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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