STGW25M120DF3

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STGW25M120DF3

IGBT TRENCH FS 1200V 50A TO-247

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Spécifications

Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 50 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 25A
Power - Max 375 W
Switching Energy 850µJ (on), 1.3mJ (off)
Input Type Standard
Gate Charge 85 nC
Td (on/off) @ 25°C 28ns/150ns
Test Condition 600V, 25A, 15Ohm, 15V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number STGW25
Current - Collector Pulsed (Icm) 100 A
Reverse Recovery Time (trr) 265 ns

Vue d'ensemble

Description

The STGW25M120DF3 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for use in medium voltage applications. Manufactured by STMicroelectronics, it is part of the STG series, which is known for its efficiency and reliability in power electronics. The device is rated for a maximum collector-emitter voltage of 1200V and can handle a collector current of up to 25A, making it suitable for various applications such as inverters, converters, and motor drives.
Key features include low conduction and switching losses, high temperature operation, and robust thermal performance. The IGBT is housed in a TO-247 package, allowing for efficient heat dissipation. This makes it ideal for applications requiring high efficiency and thermal management. The STGW25M120DF3 is particularly suitable for renewable energy systems, industrial automation, and power supply systems, where performance and reliability are critical. Overall, it is a versatile component that meets the demands of modern power electronic systems.

Features

The STGW25M120DF3 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for use in various applications, including industrial drives, renewable energy, and power conversion systems. Key features include:
1. Voltage Rating: 1200V, suitable for high-voltage applications.
2. Current Rating: 25A, enabling efficient power handling.
3. Low Switch Losses: Optimized for reduced conduction and switching losses, enhancing overall efficiency.
4. Thermal Performance: Designed with a low thermal resistance to manage heat dissipation effectively.
5. Soft Switching: Enables soft turn-off characteristics, which helps reduce electromagnetic interference (EMI).
6. Robustness: Built to withstand harsh operating conditions, enhancing reliability and longevity.
7. TO-247 Package: Available in a TO-247 package for easy mounting and integration.
Overall, the STGW25M120DF3 is ideal for applications demanding high efficiency and reliability in power electronics.

Package

The STGW25M120DF3 is packaged in a TO-247 type casing. This package type is designed for high power applications, providing efficient heat dissipation and mechanical robustness.

Pinout

The STGW25M120DF3 is a 1200V, 25A IGBT (Insulated Gate Bipolar Transistor) in a TO-247 package. It features a total of three pins. The functions of these pins are as follows:
1. Collector (C): This pin connects to the high voltage supply or load, allowing current to flow from the collector to the emitter when the IGBT is turned on.
2. Gate (G): This pin is used to control the switching of the IGBT. Applying a voltage to the gate allows the device to turn on (conduct current) or off (stop conducting).
3. Emitter (E): This pin is connected to the ground or the negative side of the circuit. Current flows from the collector to the emitter when the IGBT is activated.
This device is commonly used in power electronics applications, such as inverters and converters, due to its ability to handle high voltage and current levels efficiently.

Manufacturer

The STGW25M120DF3 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including microcontrollers, power management devices, and various integrated circuits. The company serves diverse markets, including automotive, industrial, personal electronics, and communication. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its commitment to innovation and sustainability, offering solutions that enhance energy efficiency and connectivity in modern technology.

Application

The STGW25M120DF3 is a 1200V, 25A IGBT (Insulated Gate Bipolar Transistor) suited for high-power applications. Its primary application areas include industrial motor drives, renewable energy systems (like solar inverters), and power supplies. Additionally, it is utilized in welding equipment, electric vehicles, and uninterruptible power supplies (UPS), where efficient switching and high voltage capabilities are essential.

Equivalent

The STGW25M120DF3 is a 1200V, 25A IGBT transistor. Equivalent products include:
1. Infineon IGBT: BSM25GD120
2. ON Semiconductor: MBRG25M120
3. Mitsubishi: CM25DY-12NF
4. Fairchild: FGA25N120
Always verify specifications and datasheets for exact compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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