STGF15H60DF

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STGF15H60DF

IGBT 600V 30A 30W TO220FP

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Spécifications

Supplier STMicroelectronics
Package Tube
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 30 A
Current-CollectorPulsed(Icm) 60 A
Vce(on)(Max)@VgeIc 2V @ 15V, 15A
Power-Max 30 W
SwitchingEnergy 136µJ (on), 207µJ (off)
InputType Standard
GateCharge 81 nC
Td(on/off)@25°C 24.5ns/118ns
TestCondition 400V, 15A, 10Ohm, 15V
ReverseRecoveryTime(trr) 103 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-220-3 Full Pack

Vue d'ensemble

Description

The STGF15H60DF is a high-voltage, N-channel power MOSFET developed by STMicroelectronics, designed for high-efficiency applications in power electronics. With a voltage rating of 600V and a current carrying capability of 15A, it is suitable for various applications, including switch-mode power supplies, motor drives, and industrial equipment.
Key features include low on-resistance (RDS(on)), which enhances efficiency by reducing power losses during operation, and a fast switching speed that helps in improving the overall performance of circuits. Its robust design ensures reliability in challenging operating conditions.
The device typically comes in a TO-220 package, making it easy to integrate into existing designs and facilitating effective heat dissipation. With its combination of high voltage, low power loss, and fast switching capability, the STGF15H60DF is an excellent choice for engineers looking to optimize performance in demanding power applications.

Features

The STGF15H60DF is a high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for use in high-efficiency power applications. Key features include:
1. Voltage Rating: Rated for 600V, suitable for various power electronics applications.
2. Current Rating: Capable of handling a continuous collector current of up to 15A, making it effective for medium-power applications.
3. Low On-State Voltage: Offers low VCE(sat) for reduced conduction losses, enhancing overall efficiency.
4. High Switching Speed: Delivers fast switching capabilities, which is beneficial in reducing switching losses in high-frequency applications.
5. Thermal Stability: Designed with a robust package that facilitates good thermal management, ensuring reliable operation under high thermal stress.
6. Soft Recovery: Features a soft recovery characteristic, improving performance in applications like converters and inverters.
Overall, the STGF15H60DF is ideal for use in industrial drives, renewable energy systems, and motor control applications.

Package

The STGF15H60DF is packaged in a TO-220 form factor. This package type is commonly used for high-power applications, providing efficient heat dissipation and easy mounting on heatsinks.

Pinout

The STGF15H60DF is an N-channel IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics. It typically features a TO-247 package with three pins, which are designated as follows:
1. Gate (G) - This pin is used to control the operation of the IGBT. A voltage applied to the gate allows for the switching on and off of the device.
2. Collector (C) - This pin is connected to the load and is where the current flows when the IGBT is in the on state.
3. Emitter (E) - This pin is connected to the ground or negative side of the circuit, completing the circuit for the current flowing through the device.
The STGF15H60DF is designed for high-power applications, capable of handling a maximum voltage of 600V and a current of up to 15A. It is commonly used in power electronics, such as inverters and motor drivers.

Manufacturer

The STGF15H60DF is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for designing and manufacturing a wide range of semiconductor solutions, including power management, automotive, and industrial applications. The company plays a significant role in various sectors, including electronics, automotive, and telecommunications, providing innovative technologies that enable energy-efficient and high-performance solutions. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics operates in multiple countries and serves a diverse clientele with products that support the development of smart devices and systems.

Application

The STGF15H60DF is a high-voltage IGBT (Insulated Gate Bipolar Transistor) primarily used in applications such as motor drives, induction heating, and power inverters for renewable energy systems. It is suitable for industrial and consumer applications, including UPS (Uninterruptible Power Supplies), welding equipment, and switch-mode power supplies, due to its efficient switching capabilities and high thermal performance.

Equivalent

The STGF15H60DF is a 15A, 600V N-channel MOSFET. Equivalent products include:
1. IRF840 - 8A, 500V
2. FQP13N60 - 13A, 600V
3. MTP15N60 - 15A, 600V
4. STP15NM60 - 15A, 600V
Always verify specific parameters like RDS(on) and gate charge to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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