STGD5H60DF

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STGD5H60DF

TRENCH GATE FIELD-STOP IGBT, H S

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 10 A
Current-CollectorPulsed(Icm) 20 A
Vce(on)(Max)@VgeIc 1.95V @ 15V, 5A
Power-Max 83 W
SwitchingEnergy 56µJ (on), 78.5µJ (off)
InputType Standard
GateCharge 43 nC
Td(on/off)@25°C 30ns/140ns
TestCondition 400V, 5A, 47Ohm, 15V
ReverseRecoveryTime(trr) 134.5 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Vue d'ensemble

Description

STGD5H60DF is a high-performance, low-voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power management applications. It features a low on-resistance, enabling efficient switching with minimal power loss, making it suitable for applications such as DC-DC converters, motor drives, and power supplies. The device is built to handle high current levels while maintaining thermal stability, which is crucial for reliable operation in demanding environments.
STGD5H60DF typically operates with a maximum gate-source voltage of ±20V and has a current rating that allows it to handle substantial loads. Its compact package design aids in space-saving in PCB layouts. Overall, this MOSFET is ideal for engineers looking for efficient, reliable components to enhance the performance of their electronic designs.

Features

The STGD5H60DF is a high-performance N-channel MOSFET designed for various applications, including power management, motor control, and switching regulators. Key features include:
1. Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium voltage applications.
2. Current Rating: It can handle high continuous drain current, usually around 60A, allowing it to manage significant power loads.
3. Low On-Resistance (R_DS(on)): Offers low on-resistance, which minimizes conduction losses and improves efficiency in power circuits.
4. Fast Switching Speed: Designed for rapid switching, enhancing performance in high-frequency applications.
5. Thermal Management: Equipped with a robust thermal performance, featuring a suitable package that aids in heat dissipation.
6. Safe Operating Area: Ensures reliable operation within specified limits, contributing to circuit protection.
Overall, the STGD5H60DF is ideal for applications requiring efficient power management and robust performance under varying load conditions.

Package

The STGD5H60DF is packaged in a TO-220 housing. This package type is commonly used for power devices due to its ability to handle high currents and provide efficient heat dissipation.

Pinout

The STGD5H60DF is a high-voltage MOSFET with a pin count of 8. It is typically used in power management applications. The function of this MOSFET includes switching and amplification in various electronic circuits, particularly in power supplies and converters.
In terms of its pin configuration, the typical arrangement includes:
1. Gate (G) - Controls the switching action.
2. Drain (D) - Connects to the load.
3. Source (S) - Connects to ground or the negative side of the power supply.
4. Body Diode (optional) - May provide reverse current path.
This device operates at high voltages, making it suitable for applications like motor drives, DC-DC converters, and other power-handling tasks. Always refer to the datasheet for specific electrical characteristics and detailed pin configuration.

Manufacturer

The STGD5H60DF is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including integrated circuits and discrete devices for various applications such as automotive, industrial, personal electronics, and communication systems. The company is known for its innovative technologies and solutions that enhance energy efficiency and performance in electronic devices. STMicroelectronics plays a significant role in the semiconductor industry, contributing to advancements in areas like IoT, smart devices, and power management.

Application

The STGD5H60DF is a high-voltage power MOSFET primarily used in applications such as power supplies, motor drives, and industrial automation. Its features make it suitable for electric vehicles, renewable energy systems, and consumer electronics. The device is designed for efficient switching in power management circuits, enhancing reliability and thermal performance in various electronic systems.

Equivalent

The STGD5H60DF is a power MOSFET from STMicroelectronics. Equivalent products include the Infineon IPP60R190P6, ON Semiconductor NTP60N06, and Vishay SiHF60N60. Always verify specifications such as voltage, current ratings, and threshold voltages before substituting components.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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