STGB20N45LZAG

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STGB20N45LZAG

POWER TRANSISTORS

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Spécifications

Supplier STMicroelectronics
Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
Voltage-CollectorEmitterBreakdown(Max) 450 V
Current-Collector(Ic)(Max) 25 A
Current-CollectorPulsed(Icm) 50 A
Vce(on)(Max)@VgeIc 1.25V @ 4V, 6A
Power-Max 150 W
InputType Logic
GateCharge 26 nC
Td(on/off)@25°C 1.1µs/4.6µs
TestCondition 300V, 10A, 1kOhm, 5V
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
Package/Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vue d'ensemble

Description

STGB20N45LZAG is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power management applications. It features a maximum drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 45A, making it suitable for high-efficiency switching applications such as DC-DC converters, motor drivers, and power amplifiers. The "ZAG" suffix often indicates specific packaging or performance characteristics that enhance thermal management or electrical performance.
Key specifications typically include low on-resistance (RDS(on)), which reduces power loss during operation, and fast switching speeds, contributing to better efficiency and thermal performance. Its MOSFET construction allows for easy integration into various electronic circuits, providing reliable operation in demanding environments. Overall, STGB20N45LZAG is ideal for applications requiring efficient power handling and thermal stability.

Features

The STGB20N45LZAG is a high-voltage N-channel MOSFET designed for various applications, including power management, automotive, and industrial systems. Key features include:
1. Voltage Rating: 450V, allowing it to handle high-voltage applications.
2. Current Rating: 20A continuous drain current with appropriate heat sinking.
3. RDS(on): Low on-resistance (typically around 0.27Ω at VGS = 10V), minimizing conduction losses.
4. Gate Threshold Voltage (VGS(th)): Typically ranges from 2V to 4V, enabling efficient switching.
5. Fast Switching Speed: Suitable for high-frequency applications due to low gate charge (QG).
6. Thermal Management: Capable of operating at high temperatures with a maximum junction temperature of 150°C.
7. Package: Available in TO-220, ensuring good thermal performance and ease of mounting.
These characteristics make the STGB20N45LZAG a reliable choice for efficient switching and power conversion solutions in demanding environments.

Package

The STGB20N45LZAG is housed in a TO-247 package type, which is a robust, insulated package designed for high-power applications, offering good thermal performance and easy mounting.

Pinout

The STGB20N45LZAG is a power MOSFET manufactured by STMicroelectronics. It features a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - Connected to the load, where current flows out.
3. Source (S) - Connected to the ground or the lower potential in the circuit.
The MOSFET is designed for high-voltage applications and has a maximum drain-source voltage (V_DS) of 450V, a continuous drain current (I_D) of 20A, and low on-state resistance (R_DS(on)), making it suitable for various applications such as power supplies, motor drives, and inverters. Always refer to the specific datasheet for complete electrical characteristics and thermal management details.

Manufacturer

The STGB20N45LZAG is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products for various applications, including automotive, industrial, consumer electronics, and communication. The company is known for its innovations in power management, analog, and digital semiconductor technologies. STMicroelectronics is a key player in the electronics industry, focusing on sustainability and energy efficiency in its products.

Application

The STGB20N45LZAG is a high-voltage MOSFET used primarily in applications such as power supplies, motor drives, and renewable energy systems like solar inverters. Its features make it suitable for high-efficiency switching, enabling better thermal performance in DC-DC converters and industrial automation systems. Additionally, it finds use in electric vehicles and other power management solutions where efficient energy conversion is critical.

Equivalent

The STGB20N45LZAG is a 450V, 20A IGBT. Equivalent products include the Infineon FGA20N45F, ON Semiconductor MGD20N45, and Mitsubishi CM20DY-12T. Always check data sheets for specific characteristics and ensure compatibility with your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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