STGB20M65DF2

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STGB20M65DF2

IGBT TRENCH FS 650V 40A D2PAK

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  • Mfr. Partie #STGB20M65DF2
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Spécifications

Series M
Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 40 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A
Power - Max 166 W
Switching Energy 140µJ (on), 560µJ (off)
Input Type Standard
Gate Charge 63 nC
Td (on/off) @ 25°C 26ns/108ns
Test Condition 400V, 20A, 12Ohm, 15V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Base Product Number STGB20
Current - Collector Pulsed (Icm) 80 A
Reverse Recovery Time (trr) 166 ns

Vue d'ensemble

Description

The STGB20M65DF2 is a high-performance, 20A, 650V N-channel MOSFET designed for various applications, including power supplies, motor control, and converters. It features low on-resistance, which enhances efficiency and reduces heat generation during operation. The device is optimized for switching applications, providing fast switching times and reliable performance. With a maximum gate-source voltage rating and robust thermal characteristics, the STGB20M65DF2 is suitable for high-frequency applications and can handle significant power loads.
Its compact design and compatibility with surface-mount technology (SMD) facilitate integration into modern electronic circuits, making it an ideal choice for engineers looking to optimize space and performance in their designs. Overall, the STGB20M65DF2 is a versatile and efficient solution for managing power in various electronic applications.

Features

The STGB20M65DF2 is a high-voltage, 20A, 650V N-channel IGBT (Insulated Gate Bipolar Transistor) designed for various applications including inverters, motor drives, and power supplies. Key features include:
1. Voltage Rating: 650V maximum collector-emitter voltage.
2. Current Rating: 20A maximum continuous collector current.
3. Low Gate Drive Requirements: Allows for easy driving with low gate voltage.
4. Fast Switching Speed: Enhances efficiency in high-frequency applications.
5. Low Conduction Losses: Optimized for lower power dissipation.
6. Thermal Stability: Designed to operate in high-temperature environments.
7. Robust Packaging: Available in a TO-247 package for improved thermal management.
These features make the STGB20M65DF2 suitable for various industrial applications where performance and reliability are crucial.

Package

The STGB20M65DF2 is packaged in a TO-247 format. This type of package is designed for high-power applications, offering good thermal performance and ease of mounting.

Pinout

The STGB20M65DF2 is a 650V N-channel MOSFET manufactured by STMicroelectronics. It features a TO-220 package with a pin count of 3.
The pin functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to this pin turns the device on, allowing current to flow from the drain to the source.
2. Drain (D) - This is the terminal through which the current flows into the MOSFET when it is on. It connects to the load in most applications.
3. Source (S) - This pin is the terminal through which current exits the MOSFET. It is typically connected to the ground or the negative side of the power supply.
The STGB20M65DF2 is designed for high-efficiency power conversion applications, making it suitable for use in various industrial applications, including switch-mode power supplies and motor drives.

Manufacturer

The STGB20M65DF2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is a leader in the design, development, and manufacture of a wide range of semiconductor products, including power devices, microcontrollers, and sensors. Founded in 1987 and headquartered in Geneva, Switzerland, the company serves various markets, including automotive, industrial, consumer, and communication sectors. STMicroelectronics is known for its innovation in energy-efficient solutions and smart technologies, contributing to advancements in areas such as the Internet of Things (IoT), automotive electronics, and industrial automation.

Application

The STGB20M65DF2 is a silicon carbide (SiC) MOSFET used primarily in high-efficiency power electronics applications. Key areas include renewable energy systems (like solar inverters), electric vehicles, industrial motor drives, and high-frequency switching power supplies. Its high thermal conductivity and low switching losses make it suitable for demanding applications requiring enhanced performance and reliability.

Equivalent

The STGB20M65DF2 is a 650V, 20A IGBT. Equivalent products include:
1. Infineon IGBT: IKW20N65H3
2. ON Semiconductor: NGTB20N65L
3. Mitsubishi: MG20J6ES
4. Fairchild/ON: FGH40N65SMD
Always check the specific parameters and ratings for exact compatibility in applications.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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