STGB10NB37LZT4

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STGB10NB37LZT4

IGBT 440V 20A 125W D2PAK

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Spécifications

Series PowerMESH™
Part Status Active
Voltage - Collector Emitter Breakdown (Max) 440 V
Current - Collector (Ic) (Max) 20 A
Current - Collector Pulsed (Icm) 40 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 4.5V, 10A
Power - Max 125 W
Switching Energy 2.4mJ (on), 5mJ (off)
Input Type Standard
Gate Charge 28 nC
Td (on/off) @ 25°C 1.3µs/8µs
Test Condition 328V, 10A, 1kOhm, 5V
Operating Temperature -65°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Base Product Number STGB10

Vue d'ensemble

Description

STGB10NB37LZT4 is a high-performance power MOSFET designed for various applications, including power management and switching. It features low on-resistance and fast switching speeds, making it suitable for use in converters, inverters, and power supplies. The device is part of a broader family of MOSFETs characterized by their robust thermal performance and efficiency, allowing for effective heat dissipation and prolonged operational stability.
Typically, STGB10NB37LZT4 is housed in a TO-220 package, facilitating easy heat sinking and integration into electronic circuits. It operates efficiently in high-voltage environments, making it ideal for industrial and automotive applications. Key specifications often include a maximum drain-source voltage (V_DS), high current rating (I_D), and a threshold voltage (V_GS) that ensure reliable switching performance.
For detailed specifications, performance curves, and application guidelines, refer to the manufacturer's datasheet.

Features

The STGB10NB37LZT4 is a high-performance N-channel MOSFET designed for power applications, featuring a maximum drain-source voltage (Vds) of 370V and a continuous drain current (Id) of 10A at a case temperature of 25°C. Its low on-state resistance (Rds(on)) ensures efficient operation, minimizing power loss during conduction. The device has a gate threshold voltage (Vgs(th)) ranging from 2V to 4V, allowing for easy control in various circuits.
The STGB10NB37LZT4 also supports fast switching speeds, making it suitable for applications such as switch-mode power supplies, motor drives, and inverters. It comes in a TO-220 package, facilitating effective thermal management. Additionally, its rugged design offers protection against voltage spikes and enhances reliability in demanding environments.
Overall, the STGB10NB37LZT4 is an excellent choice for high-voltage applications requiring efficiency and robust performance.

Package

The STGB10NB37LZT4 is typically packaged in a TO-220 style package, which provides efficient heat dissipation and is commonly used for power semiconductor devices.

Pinout

The STGB10NB37LZT4 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-voltage applications. It has a total of 5 pins.
Here’s the pin configuration and their functions:
1. Gate (G) - The control terminal used to turn the MOSFET on or off by applying a voltage.
2. Drain (D) - The terminal where the current exits the MOSFET; it connects to the load.
3. Source (S) - The terminal where the current enters the MOSFET; typically connected to ground or a lower potential compared to the drain.
4. Tab - Often used for heat dissipation; it may be connected to the source or left floating depending on the application.
5. Body Diode - Not a pin, but an inherent part of the MOSFET structure that allows current to flow in the reverse direction.
This device is suited for applications like power converters and motor drives due to its high voltage rating and efficiency.

Manufacturer

The STGB10NB37LZT4 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design and manufacturing of a wide range of electronic components and systems, including analog, digital, and mixed-signal integrated circuits. The company serves various industries, including automotive, industrial, consumer electronics, and telecommunications. It is known for its innovative technologies and products that support the growing demand for energy-efficient and high-performance solutions in the electronics market.

Application

The STGB10NB37LZT4 is a N-channel MOSFET commonly used in applications such as power management, motor control, switching power supplies, and LED drivers. Its high efficiency and low on-resistance make it suitable for automotive, industrial, and consumer electronics, particularly in high-current and high-voltage environments.

Equivalent

The STGB10NB37LZT4 is a high-voltage MOSFET. Equivalent products include the IRF740, FQP30N60, and MTP30N60E in similar voltage and current ratings. When looking for equivalents, ensure compatibility with your specific application in terms of V_DS, I_D, R_DS(on), and thermal characteristics. Always verify specifications from the manufacturer for precise replacements.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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