STF3NK80Z

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STF3NK80Z

MOSFET N-CH 800V 2.5A TO220FP

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Spécifications

Package Tube
Series SuperMESH™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 800 V
Current-ContinuousDrain(Id)@25°C 2.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.5Ohm @ 1.25A, 10V
Vgs(th)(Max)@Id 4.5V @ 50µA
GateCharge(Qg)(Max)@Vgs 19 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 485 pF @ 25 V
PowerDissipation(Max) 25W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220FP

Vue d'ensemble

Description

The STF3NK80Z is a high-voltage N-channel MOSFET designed for various power applications. It features a maximum drain-source voltage (Vds) of 800V and a continuous drain current (Id) rating of 3A at a junction temperature of 25°C. Its low on-resistance (Rds(on)) allows for efficient operation, minimizing power loss during switching.
This MOSFET is particularly suited for applications in switch-mode power supplies, motor drivers, and lighting control circuits. The device is housed in a TO-220 package, facilitating easy heat dissipation and integration into various electronic circuits.
The STF3NK80Z typically displays fast switching speeds, making it ideal for high-frequency applications. It also features built-in protection against over-temperature conditions, enhancing reliability. Overall, this component is favored for its performance and efficiency in high-voltage power management applications.

Features

The STF3NK80Z is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 800V, allowing it to handle high voltage applications.
2. Current Rating: The continuous drain current (Id) is rated at 3A, making it suitable for moderate power usage.
3. Low On-Resistance: With a low Rds(on) value (around 0.5Ω), it ensures efficient operation with reduced heat generation.
4. Fast Switching: It offers rapid switching capabilities, enhancing performance in high-frequency applications.
5. Robust Package: Available in TO-220 and DPAK packages for effective heat dissipation and easy mounting.
6. Gate Threshold Voltage: The gate-source threshold voltage (Vgs) is between 2V and 4V, making it compatible with a variety of gate drive circuits.
These features make the STF3NK80Z ideal for use in power supply circuits, motor drives, and other applications where efficient switching and high voltage handling are crucial.

Package

The STF3NK80Z is typically packaged in a TO-220 package type. This package type is commonly used for power MOSFETs, providing effective heat dissipation and ease of mounting on heatsinks in various electronic applications.

Pinout

The STF3NK80Z is an N-channel MOSFET from STMicroelectronics, specifically designed for high-voltage applications. It features a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET and regulates its on/off state by applying a voltage.
2. Drain (D): This pin is where the load current flows into the MOSFET when it is turned on.
3. Source (S): This pin connects to the ground or the negative side of the circuit, allowing current to flow out when the device is activated.
The STF3NK80Z can handle a maximum drain-source voltage (Vds) of 800V and a continuous drain current (Id) of up to 3A. Its robust design makes it suitable for applications like power supplies, motor drives, and other switching applications.

Manufacturer

The STF3NK80Z is manufactured by STMicroelectronics, a global semiconductor company headquartered in Switzerland. STMicroelectronics specializes in designing, manufacturing, and marketing a wide range of semiconductor products and solutions, including microcontrollers, memory chips, and power management devices. The company serves various industries, including automotive, industrial, personal electronics, and communication equipment. STMicroelectronics is known for its innovations in power semiconductor technology, particularly in the areas of MOSFETs and IGBTs, which are essential for efficient power management in electronic devices.

Application

The STF3NK80Z is an N-channel MOSFET primarily used in power electronics applications. Its key areas include switching power supplies, DC-DC converters, motor control, and lighting circuits. It is suitable for high-voltage applications due to its 800V rating and low on-resistance, making it efficient for industrial automation, renewable energy systems, and electric vehicles.

Equivalent

The STF3NK80Z is an N-channel MOSFET. Equivalent products include the STP3NK80Z, IRF840, FQP30N80C, and BUK7Y3R8-60. When substituting, ensure the voltage, current ratings, and on-resistance are compatible with your application. Always consult the datasheets for specifications and confirm suitability.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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