STF33N65M2

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STF33N65M2

MOSFET N-CH 650V 24A TO220FP

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Spécifications

Package Tube
Series MDmesh™ M2
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 24A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 140mOhm @ 12A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 41.5 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1790 pF @ 100 V
PowerDissipation(Max) 34W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220FP

Vue d'ensemble

Description

The STF33N65M2 is a high-performance N-channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) rating of 33A, making it suitable for high-voltage circuits. The device has a low on-resistance (R_DS(on)) of 0.190 ohms, which enhances efficiency by reducing power losses during operation.
The STF33N65M2 is optimized for fast switching speeds and has a gate threshold voltage (V_GS(th)) range of 2V to 4V, facilitating easy drive requirements. It is commonly used in applications such as power supplies, motor drives, and inverters due to its robustness and thermal stability.
The package options typically include TO-220, ensuring efficient thermal management. Overall, the STF33N65M2 is an excellent choice for designers seeking reliable performance in demanding environments.

Features

The STF33N65M2 is a N-channel MOSFET designed for high voltage applications. Key features include:
1. Voltage Rating: 650V, suitable for high-voltage switching applications.
2. Continuous Drain Current: 33A, allowing significant current handling capabilities.
3. RDS(on): Low on-resistance (typical 0.35Ω at VGS=10V), which enhances efficiency and minimizes power loss.
4. Gate Threshold Voltage (VGS(th)): Typically between 2V to 4V, facilitating easy drive with standard logic levels.
5. Fast Switching Speed: Enables efficient operation in high-frequency applications.
6. Robust Package: Available in TO-220 package, providing effective heat dissipation and ease of mounting.
7. Applications: Ideal for use in power supplies, motor drives, and other power management circuits.
Overall, the STF33N65M2 is suited for demanding electronic applications requiring reliable performance and efficiency.

Package

The STF33N65M2 is packaged in a TO-220 format, which is a popular package type for power MOSFETs, providing good thermal performance and ease of mounting on heat sinks.

Pinout

The STF33N65M2 is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate turns the device on or off.
2. Drain (D) - This pin is where the load is connected, and it provides the path for current when the MOSFET is active.
3. Source (S) - This pin is connected to the ground or the negative terminal of the power supply and completes the circuit.
The STF33N65M2 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 33A. It is commonly used in power conversion, switching applications, and motor drives.

Manufacturer

The STF33N65M2 is a power MOSFET manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of integrated circuits and discrete devices. The company serves various sectors, including automotive, industrial, personal electronics, communications, and consumer goods. With a strong focus on innovation and sustainability, STMicroelectronics is known for its commitment to providing high-performance and energy-efficient products, making it a key player in the semiconductor industry.

Application

The STF33N65M2 is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key areas include power supplies, motor drives, and inverter circuits. It is suitable for energy-efficient switching in various applications like renewable energy systems (solar inverters), electric vehicles, and industrial automation. Its high voltage and current ratings make it ideal for use in converters and amplifiers within these domains.

Equivalent

Equivalent products to the STF33N65M2 chip include the STP33N65M2, STW33N65M2, and other similar N-channel MOSFETs with comparable voltage ratings (650V), current ratings, and R_DS(on) specifications. Additionally, consider alternatives from other manufacturers like Infineon, Vishay, or ON Semiconductor that meet similar electrical characteristics. Always verify specifications to ensure compatibility.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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