STF27N60M2-EP

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STF27N60M2-EP

MOSFET N-CH 600V 20A TO220FP

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Spécifications

Series MDmesh™ M2-EP
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 163mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1320 pF @ 100 V
Power Dissipation (Max) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FP
Package / Case TO-220-3 Full Pack
Base Product Number STF27

Vue d'ensemble

Description

The STF27N60M2-EP is a high-voltage N-channel MOSFET designed for efficient power management in various applications. It is part of STMicroelectronics' MDmesh M2 technology, which offers low on-resistance and fast switching capabilities, making it suitable for use in power supplies, motor drives, and automotive applications. With a voltage rating of 600V and a continuous drain current of 27A, this MOSFET provides robust performance even in demanding conditions.
Key features include a low gate charge, which enables faster switching and reduced energy losses, and a high-speed operation that enhances overall system efficiency. The STF27N60M2-EP is packaged in a TO-220 format, facilitating effective thermal management, and is designed for easy integration into various electronic circuits. Its reliability and performance make it an ideal choice for engineers looking to optimize power conversion and control systems.

Features

The STF27N60M2-EP is a high-voltage N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 27A, allowing for substantial load handling.
3. On-Resistance: It features a low on-resistance (R_DS(on)) of 0.27Ω at V_GS = 10V, resulting in reduced conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, ensuring effective switching.
5. Fast Switching: Optimized for high-speed switching applications, improving overall efficiency in power converters.
6. Package Type: Typically available in TO-220 or similar packages, aiding in effective thermal management.
This MOSFET is widely used in applications such as switch-mode power supplies (SMPS), DC-DC converters, and motor drives due to its robustness and efficiency.

Package

The STF27N60M2-EP is packaged in an IGBT TO-247, which is a robust, high-power package designed for efficient thermal management and heat dissipation in electronic applications.

Pinout

The STF27N60M2-EP is a high-voltage N-channel MOSFET designed for applications such as power management and switching. It has a total of 3 pins.
The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D): This is the main current-carrying terminal through which the load is connected. It is the output side of the MOSFET.
3. Source (S): This terminal is connected to the ground or negative side of the power supply and serves as the reference point for the voltage.
The device is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 27A, making it suitable for high-power applications.

Manufacturer

The manufacturer of the STF27N60M2-EP is STMicroelectronics. STMicroelectronics is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components and solutions, including microcontrollers, power management devices, and sensors. Founded in 1987 and headquartered in Geneva, Switzerland, the company serves various markets such as automotive, industrial, consumer electronics, and telecommunications. STMicroelectronics is known for its innovation in semiconductor technology and its commitment to sustainability and energy efficiency. The STF27N60M2-EP is a power MOSFET designed for high-voltage applications, reflecting the company's expertise in power electronics.

Application

The STF27N60M2-EP is a MOSFET designed for high-voltage applications. Its key application areas include power supplies, motor drives, inverters, and converters in industrial and automotive systems. It is also suitable for renewable energy systems like solar inverters and power factor correction circuits, offering efficient switching and thermal performance.

Equivalent

The STF27N60M2-EP is a N-channel MOSFET. Equivalent products include the STP27N60M2, IRFIRI27N60, and PSMN2R8-60BSE. Always verify specifications like voltage, current rating, and Rds(on) to ensure compatibility for your specific application.

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