STF13NM60N

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STF13NM60N

MOSFET N-CH 600V 11A TO220FP

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Spécifications

Package Tube
Series MDmesh™ II
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 11A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 360mOhm @ 5.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 30 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 790 pF @ 50 V
PowerDissipation(Max) 25W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220FP

Vue d'ensemble

Description

The STF13NM60N is a high-voltage N-channel MOSFET designed for power applications. It features a voltage rating of 600V and a continuous drain current of up to 13A, making it suitable for various switching applications in power supplies, motor control, and lighting. With low on-resistance (R_DS(on)), it minimizes power loss during operation, enhancing efficiency.
The device is constructed with a robust package that allows for effective heat dissipation. Its gate threshold voltage helps in ensuring reliable operation in a range of conditions. The STF13NM60N is often used in circuits requiring efficient switching and high voltage handling, such as DC-DC converters and inverter systems.
Overall, its combination of high voltage capability, low power loss, and thermal performance makes it a popular choice among engineers for designing reliable and efficient power electronics.

Features

The STF13NM60N is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: 600V maximum drain-source voltage, suitable for high-voltage applications.
2. Current Rating: Continuous drain current of 13A, making it capable of handling substantial loads.
3. Low RDS(on): Drain-source on-resistance is around 0.15 ohms, minimizing power loss and improving efficiency.
4. Fast Switching: Designed for fast switching speeds, beneficial for applications like switching power supplies and inverters.
5. Thermal Performance: Enhanced thermal stability with a maximum junction temperature of 150°C.
6. Package Type: Available in a TO-220 package, which aids in heat dissipation.
These features make the STF13NM60N suitable for various applications, including power management, motor controls, and other high-efficiency electronic circuits.

Package

The STF13NM60N is typically packaged in a TO-220 type package. This package provides good thermal performance and is suitable for applications requiring heat dissipation in power semiconductor devices.

Pinout

The STF13NM60N is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This pin is where the current flows out of the MOSFET when it is turned on. It connects to the load.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. Current flows into the source when the device is on.
The STF13NM60N is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 13A. It is commonly used in power management and switching applications.

Manufacturer

The STF13NM60N is manufactured by STMicroelectronics, a global semiconductor company. Founded in 1987, STMicroelectronics is headquartered in Geneva, Switzerland, and is known for its wide range of semiconductor solutions, including power management, analog devices, microcontrollers, and integrated circuits. The company serves various industries, including automotive, industrial, personal electronics, and communications, focusing on innovation and sustainability in its products. The STF13NM60N is a high-voltage N-channel MOSFET, commonly used in power applications such as switch-mode power supplies and motor control.

Application

The STF13NM60N is a high-voltage N-channel MOSFET used in various applications, including power supplies, DC-DC converters, motor drives, and lighting control. Its high switching speed and low on-resistance make it suitable for efficient power management in industrial equipment, consumer electronics, and renewable energy systems like solar inverters.

Equivalent

The STF13NM60N is a N-channel MOSFET with a voltage rating of 600V and a continuous drain current of 13A. Equivalent products include:
1. IRF840
2. STP16NF06
3. FQA28N60
4. MTP40N60E
5. BUK7Y2R8-60
Always verify specifications such as Vds, Id, Rds(on), and package type before substitution.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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