STF10N60M2

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STF10N60M2

MOSFET N-CH 600V 7.5A TO220FP

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  • Mfr. Partie #STF10N60M2
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Spécifications

Series MDmesh™ II Plus
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 100 V
Power Dissipation (Max) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FP
Package / Case TO-220-3 Full Pack
Base Product Number STF10

Vue d'ensemble

Description

The STF10N60M2 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications, primarily in power electronics. It has a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 10A. With a low on-resistance (R_DS(on)) of around 0.15Ω, it offers efficient switching performance, making it suitable for applications like power supplies, motor drives, and converters.
The device features a fast switching speed, which enhances efficiency in high-frequency operations, and is often used in conjunction with heat sinks to manage thermal performance. Its rugged design ensures reliable operation in harsh environments. The STF10N60M2 is housed in a TO-220 package, facilitating easy mounting and heat dissipation.
Overall, it is a versatile component ideal for engineers looking to optimize power management solutions in various electronic applications.

Features

The STF10N60M2 is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
- Voltage Rating: 600V, allowing it to handle high-voltage circuits.
- Current Rating: 10A continuous drain current, suitable for a variety of applications.
- RDS(on): Low on-resistance (typically around 0.18Ω at VGS = 10V), which reduces conduction losses and improves efficiency.
- Gate Threshold Voltage: 2V to 4V, which ensures compatibility with low-voltage drive circuits.
- Fast Switching Speeds: Suitable for high-frequency applications due to rapid switching capability.
- Package: Available in TO-220 and DPAK packages, facilitating easy thermal management and assembly.
- Applications: Widely used in power supplies, inverters, and motor drives.
These features make the STF10N60M2 an excellent choice for energy-efficient designs in various electronic applications.

Package

The STF10N60M2 is typically packaged in a TO-220 format, which is a standard package type for power MOSFETs, allowing for efficient heat dissipation and easy mounting on heat sinks.

Pinout

The STF10N60M2 is a N-channel MOSFET with a pin count of 3. The pins are typically configured as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the current flows out of the device. It is connected to the load.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit, allowing the current to flow from drain to source when the MOSFET is turned on.
The STF10N60M2 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 10A. It is commonly used in power management, switching applications, and inverters.

Manufacturer

The STF10N60M2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of electronic components, including integrated circuits, microcontrollers, sensors, and power management devices. The company serves various sectors, including automotive, industrial, consumer electronics, and telecommunications. Founded in 1987, STMicroelectronics operates in multiple countries and is known for its commitment to innovation and high-quality semiconductor solutions.

Application

The STF10N60M2 is a high-voltage N-channel MOSFET used in various applications, including power supplies, motor drives, and lighting systems. Its features make it suitable for switch-mode power supplies (SMPS), inverters, and converters, particularly in renewable energy systems like solar and wind. Additionally, it can be utilized in industrial automation and consumer electronics for efficient power management and control.

Equivalent

The STF10N60M2 is a MOSFET from STMicroelectronics with a voltage rating of 600V and a current rating of 10A. Equivalent products include:
1. IRF840 (International Rectifier)
2. BTA10-600V (STMicroelectronics)
3. MTP10N60E (ON Semiconductor)
4. FQP10N60 (Fairchild Semiconductor)
Always check specifications for exact compatibility in your application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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