STF100N10F7

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STF100N10F7

MOSFET N CH 100V 45A TO-220FP

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Spécifications

Supplier STMicroelectronics
Package Tube
Series DeepGATE™, STripFET™ VII
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 45A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 8mOhm @ 22.5A, 10V
Vgs(th)(Max)@Id 4.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 61 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4369 pF @ 50 V
PowerDissipation(Max) 30W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220FP

Vue d'ensemble

Description

The STF100N10F7 is a N-channel power MOSFET designed for high-efficiency applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 100A, making it suitable for switching and amplification in power electronics. This MOSFET is characterized by its low on-resistance (R_DS(on)), which enhances its performance in terms of heat generation and energy loss during operation.
Key applications include switching power supplies, motor drivers, and DC-DC converters, where efficient power management is crucial. The device is housed in a TO-220 package, facilitating effective thermal management. Additionally, it is designed for optimal switching speed, allowing for use in high-frequency applications.
Overall, the STF100N10F7 is ideal for engineers seeking robust and reliable components for demanding power applications.

Features

The STF100N10F7 is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Rating: Supports continuous drain current (I_D) of up to 100A, allowing it to handle high-load scenarios.
3. RDS(on): Low on-resistance (RDS(on)) of approximately 7.5 mΩ, which minimizes conduction losses and improves thermal performance.
4. Gate Threshold Voltage: Gate-to-source voltage (V_GS) for turn-on is typically around 2-4V, providing flexibility in driving conditions.
5. Package Type: Available in a TO-220 package, which aids in effective heat dissipation.
6. Fast Switching: Suitable for high-speed switching applications, enhancing overall efficiency in circuits such as power supplies and motor controls.
These features make the STF100N10F7 well-suited for automotive, industrial, and consumer electronics applications where reliable and efficient power management is critical.

Package

The STF100N10F7 is typically packaged in a TO-220 format. This package type is known for its excellent thermal performance and ease of handling, making it suitable for high-power applications.

Pinout

The STF100N10F7 is an N-channel MOSFET designed for high-efficiency applications. It features a total of 3 pins. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's on/off state by applying a voltage to turn it on (conducting) or off (non-conducting).
2. Drain (D): This pin is where the current flows out of the MOSFET when it is in the on state.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit and is the entry point of the current when the MOSFET is on.
The STF100N10F7 is optimized for low R_DS(on) and high-speed switching, making it suitable for applications such as power management, DC-DC converters, and motor controls.

Manufacturer

The STF100N10F7 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and produces a wide range of semiconductor solutions, including microcontrollers, analog devices, and power management ICs. The company serves various markets, such as automotive, industrial, personal electronics, and telecommunications. Headquartered in Geneva, Switzerland, STMicroelectronics is known for its commitment to innovation and sustainability, providing high-performance products to meet the evolving needs of the electronics industry.

Application

The STF100N10F7 is a high-performance N-channel MOSFET typically used in applications such as DC-DC converters, power supplies, motor drives, and industrial equipment. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power management in renewable energy systems, electric vehicles, and consumer electronics.

Equivalent

The STF100N10F7 is a N-channel MOSFET. Equivalent products include the IRF1010, STP100N10, and FDB100N10. Always verify electrical characteristics like Vds, Id, Rds(on), and package type for compatibility with your application.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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