STD8N65M5

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STD8N65M5

MOSFET N-CH 650V 7A DPAK

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Spécifications

Supplier STMicroelectronics
Package Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™ V
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 7A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 600mOhm @ 3.5A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 15 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 690 pF @ 100 V
PowerDissipation(Max) 70W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Vue d'ensemble

Description

The STD8N65M5 is a high-voltage N-channel MOSFET transistor designed for power switching applications. It belongs to the STMicroelectronics' ST series of MOSFETs and is typically used in various applications such as power supplies, motor drives, and automotive systems.
Key features include a maximum drain-source voltage (VDS) of 650V, continuous drain current (ID) of 8A, and low on-resistance (RDS(on)), which enhances efficiency and thermal performance. The device is housed in a TO-220 package, making it suitable for heat dissipation in high-power applications. Its gate threshold voltage (VGS(th)) is designed for easy drive with standard logic levels, providing a straightforward interface with microcontrollers or other driving circuitry.
The STD8N65M5's combination of high voltage handling, efficiency, and robustness makes it a popular choice in modern electronic designs requiring reliable power management.

Features

The STD8N65M5 is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of 8A at a temperature of 25°C, providing reliable performance in various settings.
3. On-Resistance (R_DS(on)): It features a low on-state resistance of about 0.8 ohms, which minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is between 2V to 4V, ensuring compatibility with standard driving circuits.
5. Thermal Management: It has a maximum junction temperature of 150°C, allowing it to operate in demanding thermal conditions.
6. Package Type: Typically available in TO-220 or similar packages, facilitating easy heat dissipation.
These features make the STD8N65M5 suitable for applications such as power supplies, motor control, and renewable energy systems.

Package

The STD8N65M5 is typically packaged in a TO-220 format. This package type is designed for easy heat dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The STD8N65M5 is an N-channel MOSFET with a total of 3 pins. The pin configuration and functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D) - The drain pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is connected to ground or the lowest potential in the circuit. It serves as the exit point for the current when the device is operational.
The STD8N65M5 is designed for applications like switch-mode power supplies, motor control, and other high-voltage switching applications, with a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) rating of 8A.

Manufacturer

The STD8N65M5 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for its wide range of products, including integrated circuits and discrete components used in various applications such as automotive, industrial, consumer electronics, and communication systems. The company is headquartered in Geneva, Switzerland, and operates in multiple countries, focusing on innovation and the development of technologies that power smart devices and the Internet of Things (IoT).

Application

The STD8N65M5 is a high-voltage N-channel MOSFET used in various applications, including power supplies, motor drivers, and switching regulators. Its features make it suitable for energy-efficient designs in industrial equipment, automotive systems, and consumer electronics. Additionally, it is used in high-frequency converters and inverters, enabling efficient power management in renewable energy systems and electric vehicles.

Equivalent

The STD8N65M5 is a N-channel MOSFET with a voltage rating of 650V and a current rating of 8A. Equivalent products include the STP8NK65Z, IRF840, and FQP8N65. Always verify specifications like R_DS(on), gate threshold voltage, and package type to ensure compatibility in your application.

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