STD7N60M2

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STD7N60M2

MOSFET N-CH 600V 5A DPAK

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  • Mfr. Partie #STD7N60M2
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Spécifications

Series MDmesh™ II Plus
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.8 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 271 pF @ 100 V
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number STD7N60

Vue d'ensemble

Description

The STD7N60M2 is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power management and switching circuits. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) rating of up to 7A, making it suitable for high-voltage operations. The device has a low on-resistance (Rds(on)) value, which enhances efficiency by reducing power loss during operation.
This MOSFET is often used in applications such as power supplies, motor drivers, and inverters, where reliable switching performance is crucial. Its thermal performance is also noteworthy, with a specified maximum junction temperature, allowing it to operate effectively in demanding environments.
The STD7N60M2 is typically packaged in a TO-220 form factor, which aids in effective heat dissipation. Overall, it is a reliable choice for designers seeking efficient and robust solutions in high-voltage applications.

Features

The STD7N60M2 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device can handle up to 7A of continuous current, allowing for robust performance in various circuits.
3. Low Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically around 2-3V, enabling it to turn on effectively with lower gate drive voltages.
4. R_DS(on): It exhibits a low on-resistance, typically around 0.75 ohms at V_GS = 10V, which minimizes power loss during operation.
5. Fast Switching: The MOSFET is optimized for fast switching, making it suitable for applications like DC-DC converters and inverters.
6. Package: It comes in a TO-220 package, allowing for efficient heat dissipation and easy mounting on PCBs.
Overall, the STD7N60M2 is an efficient and versatile component for power management and switching applications.

Package

The STD7N60M2 is typically packaged in a TO-220 format. This package type provides good thermal performance and is suitable for applications requiring efficient heat dissipation.

Pinout

The STD7N60M2 is an N-channel MOSFET transistor with a total of three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is typically connected to ground or the lower potential in the circuit.
The STD7N60M2 is designed for high voltage applications (rated at 600V) and is used in various power electronics applications such as switching power supplies and motor drivers. Its low on-resistance contributes to efficient power management.

Manufacturer

The STD7N60M2 is manufactured by STMicroelectronics, a multinational electronics and semiconductor company. STMicroelectronics is known for designing, developing, manufacturing, and marketing a wide range of semiconductor products, including integrated circuits, sensors, and power management devices. The company serves various sectors, including automotive, industrial, personal electronics, communications, and computer applications. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is a key player in the global semiconductor market, focusing on innovation and sustainability in its product offerings.

Application

The STD7N60M2 is a power MOSFET used in various applications, including switch-mode power supplies, motor drivers, and automotive electronics. Its high voltage and current ratings make it suitable for tasks like DC-DC converters, lighting control, and UPS systems. Additionally, it is commonly utilized in industrial automation and renewable energy systems, such as solar inverters, due to its efficiency and thermal performance.

Equivalent

The STD7N60M2 is a N-channel MOSFET with a 600V rating and 7A current capacity. Equivalent products include:
1. IRF740 - 400V, 9A
2. STP7N60 - 600V, 7A
3. FQP7P60 - 600V, 7A
4. MTP7N60 - 600V, 7A
Check specific datasheets for precise specifications and applications. Always ensure compatibility with your circuit requirements.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

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