STD7ANM60N

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STD7ANM60N

MOSFET N-CH 600V 5A DPAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, MDmesh™ II
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 900mOhm @ 2.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 14 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 363 pF @ 50 V
PowerDissipation(Max) 45W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Vue d'ensemble

Description

STD7ANM60N refers to a specific model of an electronic component, likely a semiconductor device such as a transistor or diode. These components are crucial in various electronic circuits for switching and amplification purposes. The "STD" prefix usually indicates a standard component, while the subsequent numbers and letters often specify its characteristics, such as voltage, current ratings, and packaging type.
To gain a better understanding of STD7ANM60N, one would typically consult the manufacturer's datasheet, which provides essential information including maximum ratings, electrical characteristics, thermal performance, and typical applications. This information is vital for engineers and technicians when selecting components for designing reliable electronic systems.
In summary, STD7ANM60N is a model number for a semiconductor device, and further details can be found in its datasheet for specific applications and performance metrics.

Features

The STD7ANM60N is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device can handle a continuous drain current (I_D) of up to 7A, allowing it to manage significant power levels.
3. Low On-Resistance: It features a low R_DS(on) value, which enhances efficiency by reducing power losses during operation.
4. Fast Switching Speed: The MOSFET is designed for quick switching, ideal for high-frequency applications.
5. Thermal Performance: With a good thermal resistance, it can operate effectively under various thermal conditions.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is compatible with standard logic levels, facilitating easy interfacing with control circuits.
These characteristics make the STD7ANM60N suitable for use in switch-mode power supplies, motor drivers, and other power electronic applications.

Package

The STD7ANM60N is packaged in a TO-220 format. This package type is designed for high-power applications, providing efficient heat dissipation and ease of mounting on heatsinks.

Pinout

The STD7ANM60N is an N-channel MOSFET with a pin count of 5. It is part of the STMicroelectronics’ product lineup designed for power applications.
Pin Configuration:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The terminal through which the main current flows when the device is on.
3. Source (S): The terminal that connects to ground or the lower potential side of the circuit.
4. Body Diode (internal): Provides a path for current in reverse direction, useful in certain applications.
Function:
The STD7ANM60N is utilized in applications such as power supplies, motor control, and switching devices due to its high voltage rating (600V) and low on-resistance, enabling efficient operation in high-power scenarios. It features a maximum continuous drain current of 7A, making it suitable for various industrial and consumer applications.

Manufacturer

The STD7ANM60N is manufactured by STMicroelectronics, a multinational electronics and semiconductor manufacturer. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics specializes in producing a wide range of semiconductor solutions, including discrete devices, analog ICs, and microcontrollers. The company serves various markets, such as automotive, industrial, consumer electronics, and communications. It is known for its innovative technologies and commitment to sustainability, making it a key player in the global semiconductor industry.

Application

The STD7ANM60N is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key areas include switch-mode power supplies, motor control systems, and DC-DC converters. It is also suitable for industrial automation, renewable energy systems (like solar inverters), and electric vehicles, where efficient power management and rapid switching capabilities are essential.

Equivalent

The STD7ANM60N is a N-channel MOSFET. Equivalent products include:
1. IRF740
2. STP7N60
3. FQA7N60
4. MTP7N60
5. APT7N60
Ensure you check specifications like voltage, current rating, and RDS(on) when selecting an equivalent part.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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