STD5N20T4

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STD5N20T4

MOSFET N-CH 200V 5A DPAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series MESH OVERLAY™
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 800mOhm @ 2.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 27 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 350 pF @ 25 V
PowerDissipation(Max) 45W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Vue d'ensemble

Description

STD5N20T4 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high voltage applications. It typically features a voltage rating of 200V and a continuous drain current rating of around 5A. This component is often utilized in switching and amplification applications due to its efficient performance in controlling power.
Key specifications include a low on-resistance (Rds(on)), which minimizes power loss during operation, and fast switching capabilities that enhance efficiency in various applications, including power supplies, motor drivers, and lighting control. The package type is usually TO-220, facilitating effective heat dissipation.
The STD5N20T4 is known for its reliability and robustness, making it suitable for industrial and consumer electronics. When designing circuits with this MOSFET, careful consideration of thermal management and appropriate gate drive voltage is essential for optimal performance.

Features

The STD5N20T4 is a high-voltage N-channel MOSFET designed for various applications, including power supplies and motor control. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, suitable for high-voltage applications.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 5A, making it effective for moderate power applications.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically low, around 0.27 ohms at V_GS = 10V, which reduces power losses during operation.
4. Fast Switching: The device offers fast switching speeds, enhancing efficiency in switching applications.
5. Package Type: It is available in a TO-220 package, providing efficient thermal management.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2 to 4V, allowing for easier drive requirements.
Overall, the STD5N20T4 is a versatile component ideal for various electronic circuits requiring reliable high-voltage switching.

Package

The STD5N20T4 is typically available in a TO-220 package type. This package is designed for power transistors, providing good thermal performance and ease of mounting to heatsinks.

Pinout

The STD5N20T4 is an N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET operation by applying a voltage to turn it on or off.
2. Drain (D): This is where the load connects and through which the current flows when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative terminal of the power supply, allowing current to flow from the drain to the source when activated.
The device is designed for high-efficiency switching applications, featuring a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of up to 5A. Its low on-resistance (R_DS(on)) ensures minimal power loss during operation, making it suitable for various applications, including power management and DC-DC converters.

Manufacturer

The STD5N20T4 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including microcontrollers, sensors, power management devices, and discrete components. The company serves various industries, including automotive, industrial, telecommunications, and consumer electronics. STMicroelectronics is known for its innovation in technology and commitment to sustainability, working towards developing energy-efficient solutions and products to meet the growing demands of the market.

Application

The STD5N20T4 is an N-channel MOSFET commonly used in power management applications, including high-efficiency switching power supplies, motor control, and LED drivers. Its features make it suitable for applications requiring high voltage and current handling, such as in converters, inverters, and industrial automation systems. Additionally, it is used in automotive and renewable energy systems for efficient power regulation.

Equivalent

The STD5N20T4 is an N-channel MOSFET with a 20V, 5A rating. Equivalent products include the IRF840, STP5NK20Z, and FQD5N20. Ensure to check specifications such as Vds, Id, Rds(on), and package type for compatibility in your application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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