STD4NK80ZT4

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STD4NK80ZT4

MOSFET N-CH 800V 3A DPAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series SuperMESH™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 800 V
Current-ContinuousDrain(Id)@25°C 3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 3.5Ohm @ 1.5A, 10V
Vgs(th)(Max)@Id 4.5V @ 50µA
GateCharge(Qg)(Max)@Vgs 22.5 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 575 pF @ 25 V
PowerDissipation(Max) 80W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Vue d'ensemble

Description

The STD4NK80ZT4 is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications in power electronics. It has a maximum drain-source voltage (V_DS) of 800V, a continuous drain current (I_D) of 4A, and a low on-resistance (R_DS(on)) of approximately 0.9 ohms, enhancing efficiency in power conversion.
This device is commonly used in switch-mode power supplies, motor drives, and other applications requiring high voltage and efficient switching. It features a TO-220 package, which aids in effective heat dissipation. The STD4NK80ZT4 operates efficiently at high frequencies and provides thermal stability, making it suitable for demanding environments.
The MOSFET's gate is voltage-driven, allowing for low input power and fast switching speeds. Overall, the STD4NK80ZT4 is a reliable choice for designers looking to achieve efficient power management and control in their electronic circuits.

Features

The STD4NK80ZT4 is an N-channel MOSFET designed for high voltage and high current applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. Current Rating: It supports continuous drain current (I_D) up to 4A, with pulsed current capabilities much higher.
3. On-Resistance: The low on-resistance (R_DS(on)) of approximately 0.8 ohms minimizes power losses during operation.
4. Gate Threshold Voltage: It has a gate-source threshold voltage (V_GS(th)) ranging from 2V to 4V, suitable for logic-level drives.
5. Switching Speed: Designed for efficient switching, it offers fast switching characteristics, reducing switching losses.
6. Package Type: Typically available in a TO-220 package, allowing for effective heat dissipation.
These features make the STD4NK80ZT4 ideal for applications in power supplies, motor drives, and other high-performance electronic circuits.

Package

The STD4NK80ZT4 is an N-channel MOSFET packaged in a TO-220 format, which is designed for high voltage and high current applications.

Pinout

The STD4NK80ZT4 is a N-channel MOSFET with a pin count of 3. Its typical pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's switching and is used to turn the device on and off.
2. Drain (D): This pin is connected to the load and allows current to flow through when the MOSFET is on.
3. Source (S): This pin is typically connected to the ground or the negative side of the power supply.
The device is designed for high-voltage applications, rated for 800V and can handle a continuous drain current of up to 4A. It is commonly used in power management, switching applications, and in circuits requiring efficient high-voltage control.

Manufacturer

The STD4NK80ZT4 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for developing a wide range of electronic components, including power management solutions, microcontrollers, and sensors. The company operates in various sectors such as automotive, industrial, and consumer electronics, providing innovative technologies that enable efficient and sustainable designs. With a strong focus on research and development, STMicroelectronics plays a significant role in advancing the semiconductor industry worldwide.

Application

The STD4NK80ZT4 is a high-voltage N-channel MOSFET commonly used in applications such as power supplies, motor control, and switching circuits. Its features make it suitable for high-efficiency DC-DC converters, inverter circuits, and industrial power management systems. Additionally, it is utilized in automotive electronics for power distribution and control.

Equivalent

The STD4NK80ZT4 is an N-channel MOSFET with a voltage rating of 800V and a current rating of 4A. Equivalent products include the STP4NK80Z, FDP4N80NZ, and IRF840. Always verify specifications for voltage, current, gate threshold, and Rds(on) to ensure compatibility in your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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