STD4NK100Z

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STD4NK100Z

MOSFET N-CH 1000V 2.2A DPAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, SuperMESH™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1000 V
Current-ContinuousDrain(Id)@25°C 2.2A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 6.8Ohm @ 1.1A, 10V
Vgs(th)(Max)@Id 4.5V @ 50µA
GateCharge(Qg)(Max)@Vgs 18 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 601 pF @ 25 V
PowerDissipation(Max) 90W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Vue d'ensemble

Description

The STD4NK100Z is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a voltage rating of 100V and a continuous drain current of 4A, making it suitable for power management in various circuits. The device is characterized by its low on-resistance (Rds(on)), which minimizes power loss and improves thermal performance.
Typically used in power supplies, motor drivers, and switching applications, the STD4NK100Z provides fast switching times and excellent reliability. It is housed in a TO-220 package, allowing for efficient heat dissipation and easy mounting on heat sinks.
With its robust design, the STD4NK100Z is ideal for applications that require high efficiency, low power loss, and thermal stability, making it a popular choice among engineers in the field of electronics.

Features

The STD4NK100Z is a high-voltage N-channel MOSFET from STMicroelectronics, designed for power applications. It features a maximum drain-source voltage (V_DS) of 100V, a continuous drain current (I_D) of 4A, and a low on-resistance (R_DS(on)) of about 0.8 ohms, which enhances efficiency in power conversion applications.
Key features include:
- High Voltage Rating: Suitable for applications requiring up to 100V.
- Fast Switching: Optimized for fast switching applications, making it ideal for use in DC-DC converters, inverters, and motor drives.
- Low Gate Charge (Q_g): Allows for efficient driving with low power loss during switching.
- Thermal Performance: Designed with a thermal resistance that aids in effective heat dissipation, ensuring reliable operation at elevated temperatures.
- TO-220 Package: Provides ease of heat sinking and integration into various circuits.
Overall, the STD4NK100Z is suitable for a wide range of power management applications, thanks to its robust performance and efficiency.

Package

The STD4NK100Z is typically packaged in a TO-220 format. This package type is designed for power transistors and features a metal tab for heat dissipation, allowing for efficient thermal management in various electronic applications.

Pinout

The STD4NK100Z is an N-channel MOSFET with a total of 4 pins. Its pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's operation, allowing it to switch on or off based on the voltage applied.
2. Drain (D): This is the terminal through which the load current flows when the device is on.
3. Source (S): This pin is connected to the ground or the negative side of the circuit, allowing current to flow from the drain to the source when the MOSFET is activated.
4. Body Diode (internal): Not a pin but important for functionality; the internal body diode allows current to flow from the source to the drain in the reverse direction, providing protection in certain applications.
The STD4NK100Z is designed for high-voltage applications, with a maximum voltage rating of 100V and a continuous drain current of up to 4A.

Manufacturer

The STD4NK100Z is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor products, including integrated circuits, microcontrollers, sensors, and power management devices. The company serves various sectors such as automotive, industrial, personal electronics, and communications. Headquartered in Geneva, Switzerland, STMicroelectronics is recognized for its commitment to innovation and sustainability in the semiconductor industry, contributing to the development of smart technologies and solutions for a connected world.

Application

The STD4NK100Z is an N-channel MOSFET primarily used in power management applications, including switching power supplies, motor drivers, and DC-DC converters. Its low on-resistance and high current rating make it suitable for high-efficiency power circuits. Additionally, it can be employed in automotive applications, LED lighting, and other consumer electronics for efficient power control and signal switching.

Equivalent

The STD4NK100Z is an N-channel MOSFET with a voltage rating of 100V and a current rating of 4A. Equivalent products include the IRF840, STP4NK100Z, and FQP30N100. Always verify the specific parameters, such as R_DS(on), gate threshold voltage, and package type, to ensure compatibility in your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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