STD3NK50ZT4

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STD3NK50ZT4

MOSFET N-CH 500V 2.3A DPAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series SuperMESH™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 2.3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 3.3Ohm @ 1.15A, 10V
Vgs(th)(Max)@Id 4.5V @ 50µA
GateCharge(Qg)(Max)@Vgs 15 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 280 pF @ 25 V
PowerDissipation(Max) 45W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Vue d'ensemble

Description

The STD3NK50ZT4 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for high-voltage applications, with a voltage rating of 500V and a current rating of 3A. The device features a low on-resistance, which enhances its efficiency in power management applications such as switch-mode power supplies, motor control, and automotive systems.
The STD3NK50ZT4 is housed in a TO-220 package, making it suitable for heat dissipation in applications where thermal management is critical. Its fast switching capabilities allow for improved performance in signal processing and power conversion circuits.
Key specifications include a maximum gate-source voltage of ±20V, a threshold voltage range of 2-4V, and a maximum junction temperature of 150°C. The MOSFET is also characterized by its low gate charge and high-speed operation, making it an ideal choice for engineers seeking reliable performance in energy-efficient designs.

Features

The STD3NK50ZT4 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 3A, which is adequate for many power applications.
3. On-Resistance: The low on-resistance (R_DS(on)) of approximately 0.6 ohms at V_GS = 10V ensures efficient operation and minimal power loss.
4. Gate Threshold Voltage: V_GS(th) is typically between 2V and 4V, allowing for easy drive capability.
5. Fast Switching: Its design enables fast switching speeds, making it ideal for switching power supplies and inverters.
6. Package: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
Overall, the STD3NK50ZT4 is well-suited for various power management applications, including automotive and industrial systems.

Package

The STD3NK50ZT4 is packaged in a TO-220 form factor. This package type is designed for high-power applications, providing effective heat dissipation and easy mounting to heatsinks.

Pinout

The STD3NK50ZT4 is a N-channel power MOSFET designed for high-voltage applications. It has a total of 4 pins with the following functions:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from drain to source.
2. Drain (D) - This is the terminal through which the main current flows. It is connected to the load.
3. Source (S) - This pin is connected to the ground or the negative terminal of the power supply. It is the terminal through which the current exits the MOSFET.
The configuration is typically as follows: looking at the device with the pins facing down, the order from left to right is Gate, Drain, Source, and the fourth pin is often unused or serves as a thermal pad for heat dissipation. The STD3NK50ZT4 is rated for a maximum drain-source voltage of 500V and has low on-resistance, making it suitable for various power applications.

Manufacturer

The STD3NK50ZT4 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, and supplies a broad range of semiconductor products, including integrated circuits, discrete devices, and sensors. The company serves various markets, including automotive, industrial, consumer electronics, and telecommunications. STMicroelectronics is known for its innovation in power management, microcontrollers, and analog devices, contributing to advancements in technology across multiple industries.

Application

The STD3NK50ZT4 is a high-voltage N-channel MOSFET used in various applications, including automotive systems, power supplies, industrial machinery, and renewable energy systems. It is suitable for switching and amplification tasks in power management, motor control, and inverter circuits due to its high efficiency and thermal performance.

Equivalent

The STD3NK50ZT4 is a 500V N-channel MOSFET. Equivalent products include:
1. IRF840 - 500V, 8A N-channel MOSFET
2. MTP50N50 - 500V, 14A N-channel MOSFET
3. STP50NF50 - 500V, 9A N-channel MOSFET
Always verify specifications like Rds(on), Vgs, and package type for compatibility in your application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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