STD25N10F7

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STD25N10F7

MOSFET N-CH 100V 25A DPAK

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Spécifications

Supplier STMicroelectronics
Package Tape & Reel (TR),Cut Tape (CT)
Series DeepGATE™, STripFET™ VII
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 25A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 35mOhm @ 12.5A, 10V
Vgs(th)(Max)@Id 4.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 14 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 920 pF @ 50 V
PowerDissipation(Max) 40W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Vue d'ensemble

Description

The STD25N10F7 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features a voltage rating of 100V and a continuous drain current of 25A, making it suitable for high-voltage switching applications in power supplies, motor controls, and other electronic devices. The device has a low on-resistance (R_DS(on)), which enhances efficiency by minimizing power loss during operation.
Typical characteristics include a threshold voltage (V_GS(th)) ranging from 2V to 4V, enabling efficient switching at lower gate voltages. The STD25N10F7 is housed in a TO-220 package, facilitating good thermal management and allowing for heatsinking.
Overall, this MOSFET is ideal for applications requiring robust performance under high voltage and current conditions, making it a popular choice in various industrial and consumer electronics sectors.

Features

The STD25N10F7 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 100V.
2. Current Rating: Capable of handling a continuous drain current (ID) of 25A at a specified temperature.
3. RDS(on): Low on-resistance (RDS(on)) typically around 0.14 ohms, which minimizes power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) ranges from 2V to 4V, allowing it to be driven efficiently by logic-level signals.
5. Packaging: Usually available in TO-220 or similar packages, facilitating heat dissipation and ease of mounting.
6. Applications: Ideal for use in power supplies, motor drivers, and DC-DC converters.
These features make the STD25N10F7 suitable for various switching and amplification applications in electronic circuits.

Package

The STD25N10F7 is typically packaged in a TO-220 format. This package type is designed for efficient heat dissipation and is suitable for high-power applications, allowing for easy mounting on heatsinks.

Pinout

The STD25N10F7 is an N-channel power MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin allows current to flow between the drain and source.
2. Drain (D): This pin is where the main current flows into the MOSFET. It is connected to the load in a typical circuit.
3. Source (S): This pin is the exit point for the current, which flows out of the MOSFET to ground or back to the power source.
The STD25N10F7 is designed for high-speed switching applications and can handle a maximum drain current of 25A with a maximum voltage rating of 100V. Its low on-resistance (R_DS(on)) enhances its efficiency, making it suitable for various power management applications.

Manufacturer

The STD25N10F7 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in the design, development, and production of a wide range of electronic components, including microcontrollers, sensors, and power management devices. The company serves various industries, including automotive, industrial, personal electronics, and communications. STMicroelectronics is known for its innovative solutions in semiconductor technology and plays a significant role in advancing electronics for a sustainable future.

Application

The STD25N10F7 is an N-channel MOSFET commonly used in applications such as power management, switching power supplies, motor drivers, and automotive systems. Its features make it suitable for high-efficiency DC-DC converters, audio amplifiers, and industrial control circuits. Additionally, it is utilized in consumer electronics for power switching and regulation tasks.

Equivalent

The STD25N10F7 is a N-channel MOSFET with a 25A, 100V rating. Equivalent products include the IRF250, STP25NM50, and FQP25N10. Always check specifications like RDS(on), gate threshold voltage, and power dissipation to ensure compatibility.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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