STD1NK60T4

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STD1NK60T4

MOSFET N-CH 600V 1A DPAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series SuperMESH™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 1A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 8.5Ohm @ 500mA, 10V
Vgs(th)(Max)@Id 3.7V @ 250µA
GateCharge(Qg)(Max)@Vgs 10 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 156 pF @ 25 V
PowerDissipation(Max) 30W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Vue d'ensemble

Description

The STD1NK60T4 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in high-voltage and high-speed applications. Manufactured by STMicroelectronics, it features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 1A. This component is optimized for switching applications, including power supplies, motor control, and lighting systems.
Key characteristics include a low on-resistance (R_DS(on)), which minimizes power losses during operation, and a fast switching speed suitable for efficient performance in converters and inverters. The device comes in a TO-220 package, making it suitable for heat dissipation and ease of mounting on PCBs. It is also designed to handle high temperatures, making it reliable for various operational environments.
Overall, the STD1NK60T4 is ideal for engineers looking for a robust and efficient solution in power electronics applications.

Features

The STD1NK60T4 is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage power applications.
2. Current Handling: The device has a continuous drain current (I_D) rating of up to 1A (at T_C = 25°C) and can withstand higher currents in pulsed conditions.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) typically around 1.6 ohms, which allows for efficient power conversion and reduced heat generation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, facilitating easy driving with standard gate voltages.
5. Package: Typically available in a TO-220 package, it allows for good thermal management.
6. Applications: Ideal for use in switch-mode power supplies, inverters, and other high-frequency applications.
This MOSFET is valued for its reliability and efficiency in power electronics.

Package

The STD1NK60T4 is packaged in a TO-220 format. This package type is suitable for high-power applications, providing good thermal performance and ease of mounting to heat sinks.

Pinout

The STD1NK60T4 is an N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): The control terminal used to turn the MOSFET on or off. It regulates the flow of current between the drain and source.
2. Drain (D): The terminal through which the current enters the MOSFET when it is in the on state.
3. Source (S): The terminal through which the current exits the MOSFET.
Key specifications include a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 1A at a temperature of 25°C. This device is commonly used in applications such as power switches, converters, and other high-voltage switching applications.

Manufacturer

The STD1NK60T4 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including microcontrollers, sensors, and power management devices. Founded in 1987 through the merger of Italian and French companies, STMicroelectronics is headquartered in Geneva, Switzerland. The company serves various sectors, including automotive, industrial, personal electronics, and communication, focusing on innovation and sustainability in its product offerings.

Application

The STD1NK60T4 is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key application areas include switch mode power supplies, motor drives, and inverters for renewable energy systems. It is also utilized in lighting control, inductive load switching, and various consumer electronic devices where efficient power management is essential. Its high voltage and current ratings make it suitable for industrial and automotive applications as well.

Equivalent

The STD1NK60T4 is a N-channel MOSFET with a 600V rating and a continuous drain current of 1A. Equivalent products include the STP1NK60Z, IRF840, and FQP1N60. Always check datasheets for specific parameters to ensure compatibility in your application.

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UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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