STD13N60M2

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STD13N60M2

MOSFET N-CH 600V 11A DPAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™ II Plus
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 11A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 380mOhm @ 5.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 17 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 580 pF @ 100 V
PowerDissipation(Max) 110W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Vue d'ensemble

Description

The STD13N60M2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a voltage rating of 600V and a continuous drain current capability of 13A, making it suitable for use in various power management and switching applications, such as in power supplies, converters, and motor drives.
Key specifications include a low on-resistance, which enhances efficiency by minimizing power loss when the device is conducting. The M2 series is optimized for fast switching, which is essential for applications that require high-speed operations. The device typically comes in a TO-220 package, allowing for effective heat dissipation.
Due to its robust characteristics, the STD13N60M2 is widely used in industrial, automotive, and consumer electronics. When implementing this MOSFET, it is essential to consider thermal management and gate driving requirements to ensure optimal performance.

Features

The STD13N60M2 is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: The continuous drain current (I_D) is 13A, allowing it to handle significant loads.
3. On-Resistance: It features a low on-resistance (R_DS(on)) of approximately 0.15 ohms, which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, facilitating easy drive with standard voltage levels.
5. Thermal Performance: It has a maximum junction temperature of 150°C, ensuring reliable operation in various thermal environments.
6. Package Type: Typically available in a TO-220 package, which aids in heat dissipation and mounting.
These attributes make the STD13N60M2 suitable for applications like switch-mode power supplies, motor control, and other high-efficiency power conversion tasks.

Package

The STD13N60M2 is typically packaged in a TO-220 form factor. This package is designed for efficient heat dissipation and is commonly used in power applications.

Pinout

The STD13N60M2 is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET operation, allowing it to turn on or off.
2. Drain (D): The terminal through which the current flows from the load to the MOSFET.
3. Source (S): The terminal connected to the ground or negative side of the circuit.
This MOSFET is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 13A. It is commonly used in switching applications, such as power supplies and motor drivers, due to its fast switching speed and efficiency.

Manufacturer

The STD13N60M2 is manufactured by STMicroelectronics, a global semiconductor company. Founded in 1987, STMicroelectronics is headquartered in Geneva, Switzerland, and specializes in the design, development, and manufacturing of a wide range of semiconductor products. These include analog, digital, and mixed-signal integrated circuits, as well as discrete devices. The company serves various markets such as automotive, industrial, consumer electronics, and communications. STMicroelectronics is known for its innovation and commitment to sustainability, focusing on developing solutions that enhance energy efficiency and support the growing demand for smart and connected devices.

Application

The STD13N60M2 is a N-channel MOSFET commonly used in power electronics applications such as switch-mode power supplies (SMPS), motor drives, and inverters. It is suitable for high-voltage and high-current applications, providing efficient switching for power management in automotive, industrial, and consumer electronics. Its low on-resistance and high-speed switching capabilities make it ideal for energy-efficient designs.

Equivalent

The STD13N60M2 is a 600V N-channel MOSFET. Equivalent products include:
1. IRFPG50
2. STP13NM60
3. FQP13N60
4. MTP13N60E
Always check specific datasheets for exact specifications and characteristics before substituting components.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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