STD13N60DM2

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STD13N60DM2

MOSFET N-CH 600V 11A DPAK

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Spécifications

Series MDmesh™ DM2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 365mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 730 pF @ 100 V
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number STD13

Vue d'ensemble

Description

The STD13N60DM2 is a high-voltage N-channel MOSFET manufactured by STMicroelectronics. It is designed for applications that require efficient switching and high-speed operation. With a maximum drain-to-source voltage (VDS) of 600V and a continuous drain current (ID) of 13A at room temperature, it is suitable for use in power supplies, motor drives, and other electronic circuits.
Key features include a low on-resistance (RDS(on)) which minimizes power loss during operation, fast switching speeds that enhance efficiency in high-frequency applications, and a robust construction that ensures reliability under various conditions. The device typically comes in a TO-220 package, which allows for effective heat dissipation.
Overall, the STD13N60DM2 is favored in designs that demand high performance and efficiency in power management applications. Proper thermal management and circuit design are essential to leverage its capabilities effectively.

Features

The STD13N60DM2 is an N-channel MOSFET designed for high voltage applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Current Capacity: Continuous drain current (I_D) of 13A, allowing efficient handling of power.
3. R_DS(on): Low on-resistance of approximately 0.24 ohms, minimizing conduction losses and improving thermal performance.
4. Gate Threshold Voltage: Gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, which allows for easy drive with standard logic levels.
5. Package Type: Available in a TO-220 package, facilitating effective heat dissipation and ease of mounting.
6. High-Speed Switching: Designed for fast switching applications, making it ideal for power supplies and motor control.
Overall, the STD13N60DM2 is a versatile and robust MOSFET suitable for a wide range of applications in power electronics.

Package

The STD13N60DM2 is packaged in a TO-220 format, which features a metal tab for heat dissipation and is commonly used for power applications.

Pinout

The STD13N60DM2 is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET operation by applying a voltage. When a positive voltage is applied to the gate, it allows current to flow between the drain and source.

2. Drain (D): This is the terminal where the current enters the MOSFET from the load. It is connected to the higher voltage side in typical applications.
3. Source (S): This pin is where the current exits the MOSFET. It is usually connected to the ground or low voltage side in a circuit.
The STD13N60DM2 is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 13A. It is commonly used in power supply circuits, motor drivers, and other applications requiring high voltage switching.

Manufacturer

The STD13N60DM2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including integrated circuits, microcontrollers, and power devices. The company serves various sectors such as automotive, industrial, consumer electronics, and communications. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovation in technology and commitment to sustainability. Their products are widely used in applications that require high efficiency and performance, making them a key player in the semiconductor industry.

Application

The STD13N60DM2 is a high-voltage N-channel MOSFET primarily used in applications such as power supplies, motor drives, and switching regulators. Its features allow for efficient switching in industrial and automotive applications, including inverters, lighting controls, and energy management systems. Additionally, it can be found in consumer electronics and renewable energy systems, such as solar inverters, due to its capability to handle high voltages and currents.

Equivalent

The STD13N60DM2 is a N-channel MOSFET. Equivalent products include the STP13NM60, IRF840, and FQP13N60. Ensure to check specifications like voltage, current ratings, and package type for compatibility when selecting a substitute.

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TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

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