STD12N50M2

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STD12N50M2

MOSFET N-CH 500V 10A DPAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™ M2
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 10A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 380mOhm @ 5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 15 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 550 pF @ 100 V
PowerDissipation(Max) 85W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Vue d'ensemble

Description

The STD12N50M2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It is part of STMicroelectronics' M2 series, known for its low on-resistance and high-speed switching capabilities.
Key features include a maximum drain-source voltage (V_DS) of 500 volts and a continuous drain current (I_D) of 12 amps, making it suitable for various power management applications, including switch-mode power supplies, motor drivers, and automotive applications.
The device is housed in a TO-220 package, facilitating efficient heat dissipation. Its low R_DS(on) value contributes to reduced power losses during operation, enhancing overall efficiency.
Applications typically leverage its fast switching speed and robustness, allowing it to handle high-frequency operations while maintaining reliability. When designing circuits with the STD12N50M2, careful consideration should be given to thermal management and electrical characteristics to ensure optimal performance.

Features

The STD12N50M2 is an N-channel MOSFET designed for high-power applications, featuring a 500V maximum drain-to-source voltage and a continuous drain current rating of 12A at 25°C. Key features include:
1. Low On-Resistance (RDS(on)): Approximately 0.5 ohms, ensuring efficient operation and minimal power loss.
2. Fast Switching Speed: Suitable for high-frequency applications, enhancing performance in power supplies and converters.
3. Thermal Stability: Designed to handle high temperatures, with a maximum junction temperature of 175°C, which improves reliability in various environments.
4. Avalanche Rated: Capable of withstanding voltage spikes, making it robust for transient conditions.
5. Package Type: Available in a TO-220 package, facilitating efficient heat dissipation and easy mounting on heatsinks.
Overall, the STD12N50M2 is ideal for switching and amplifying applications in automotive, industrial, and consumer electronics.

Package

The STD12N50M2 is typically packaged in a TO-220 format. This package type features a metal tab for heat dissipation and is designed for efficient thermal management in power applications.

Pinout

The STD12N50M2 is a N-channel MOSFET designed for power switching applications. It typically has a TO-220 package, which consists of three pins. The pinout functions are as follows:
1. Gate (G): Used for controlling the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): The terminal through which the load current flows when the MOSFET is on. It connects to the load.
3. Source (S): The terminal that connects to ground or the negative side of the power supply.
The STD12N50M2 features a maximum drain-source voltage (V_DS) of 500V and can handle continuous drain current (I_D) of up to 12A, making it suitable for high-voltage applications.

Manufacturer

The STD12N50M2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in developing and producing a wide range of semiconductor products, including microcontrollers, power management devices, sensors, and automotive components. The company serves various industries, including automotive, industrial, consumer electronics, and telecommunications. STMicroelectronics is known for its commitment to innovation and quality, providing solutions that enable smarter and more efficient applications.

Application

The STD12N50M2 is a N-channel MOSFET primarily used in power electronics applications such as switch-mode power supplies, motor drives, and industrial control systems. Its high voltage and current ratings make it suitable for applications in renewable energy systems, electric vehicles, and UPS (uninterruptible power supplies). Additionally, it can be employed in audio amplifiers and high-efficiency converters, enhancing performance and energy efficiency in various electronic circuits.

Equivalent

The STD12N50M2 is a MOSFET produced by STMicroelectronics. Equivalent products include the IRF520, IRF540, and MTP12N50E. Other alternatives may include the FQP12N50 and the APT12N50. Always verify specific electrical characteristics such as Vds, Id, and Rds(on) before substitution.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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