STD120N4F6

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STD120N4F6

MOSFET N-CH 40V 80A DPAK

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Spécifications

Supplier STMicroelectronics
Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 80A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4mOhm @ 40A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 65 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3850 pF @ 25 V
PowerDissipation(Max) 110W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Vue d'ensemble

Description

STD120N4F6 refers to a specific course or module code, likely within an academic curriculum. While the exact details can vary by institution, such codes typically denote introductory courses in a particular field of study.
In general, an introduction to a course like STD120N4F6 would cover foundational concepts relevant to the subject matter, essential theories, and principles, as well as practical applications. Students might engage with lectures, readings, and discussions to build a solid understanding of the topic, preparing them for more advanced coursework.
For precise information about STD120N4F6, including its objectives, content, assessment methods, and prerequisites, it is best to consult the academic institution’s course catalog or syllabus.

Features

The STD120N4F6 is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) up to 120A, ensuring robust performance under load.
3. Low On-Resistance: Extremely low R_DS(on) of 0.045 ohms, which minimizes power loss and enhances efficiency.
4. Fast Switching Speed: Suitable for high-frequency applications, allowing for efficient operation in switching power supplies.
5. Thermal Performance: Integrated with a low thermal resistance, improving heat dissipation for reliable operation.
6. Package: Typically available in TO-220 and DPAK packages for easy integration into various PCB layouts.
These features make the STD120N4F6 ideal for applications such as motor drivers, power converters, and other power management systems.

Package

The STD120N4F6 is typically available in an TO-220 package type. This package provides good thermal performance and is suitable for power applications.

Pinout

The STD120N4F6 is an N-channel MOSFET from STMicroelectronics. It features a TO-220 package with a pin count of 3.
The functions of the pins are as follows:
1. Gate (G): This pin is used to control the MOSFET's switching. When a voltage is applied to the gate, it allows current to flow between the drain and source.
2. Drain (D): This pin is where the output current flows out of the MOSFET. It is connected to the load in a switching application.
3. Source (S): This pin is connected to ground or the return path of the circuit. It completes the circuit for the current flowing through the load.
The STD120N4F6 is designed for high-speed switching applications and offers low on-resistance, making it suitable for various power management and automotive applications.

Manufacturer

The STD120N4F6 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design and production of a wide range of semiconductor devices and technologies, including microcontrollers, power management chips, and analog components. The company serves various industries, including automotive, industrial, consumer electronics, and communications. STMicroelectronics is known for its innovative solutions and commitment to sustainability, focusing on advancing technologies that enhance energy efficiency and reduce environmental impact.

Application

The STD120N4F6 is a high-performance N-channel MOSFET widely used in various applications, including power supplies, DC-DC converters, motor drives, and automotive systems. Its low on-resistance and high-speed switching capabilities make it suitable for energy-efficient designs in consumer electronics, industrial equipment, and renewable energy systems. Additionally, it is utilized in electric vehicles and battery management systems for effective power management.

Equivalent

The STD120N4F6 is a MOSFET from STMicroelectronics. Equivalent products include the IRF120, BUK7M120-55, and FDP120N15. Always verify specifications such as voltage, current ratings, and RDS(on) to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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