STD10N60M2

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STD10N60M2

MOSFET N-CH 600V 7.5A DPAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™ II Plus
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 7.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 600mOhm @ 3A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 13.5 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 400 pF @ 100 V
PowerDissipation(Max) 85W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Vue d'ensemble

Description

The STD10N60M2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high voltage and high current applications. It has a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 10A. The device features low on-resistance (R_DS(on)), allowing for efficient conduction with minimal power loss.
This MOSFET is commonly used in power supplies, motor drivers, and other switching applications where high efficiency and reliability are critical. Its robust construction makes it suitable for various industrial and consumer electronics applications. Additionally, the STD10N60M2 is designed for easy integration into circuits and can handle significant thermal loads, making it a versatile choice for engineers and designers looking to optimize performance in power management systems.

Features

The STD10N60M2 is a high-voltage N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The device has a continuous drain current (I_D) rating of 10A, allowing it to handle significant loads.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) rating, enhancing efficiency and reducing power loss during operation.
4. Fast Switching: The MOSFET is designed for fast switching speeds, which is beneficial in switching power supplies and inverters.
5. Thermal Performance: It has good thermal stability and can operate at high temperatures, accommodating varying environmental conditions.
6. Package: Packaged in TO-220, it allows for effective heat dissipation during operation.
These features make the STD10N60M2 suitable for applications in motor control, power management, and other industrial uses.

Package

The STD10N60M2 is typically packaged in a TO-220 format. This package type is known for its efficient thermal performance and ease of handling in various electronic applications, particularly in power management.

Pinout

The STD10N60M2 is a N-channel MOSFET with a pin count of 3. Its pin configuration is as follows:
1. Gate (G): Controls the switching of the device. A positive voltage applied here allows current to flow between the drain and source.

2. Drain (D): The terminal through which the current flows out of the device. It connects to the load in a circuit.
3. Source (S): The terminal through which the current enters the device. It is typically connected to ground in a low-side switch configuration.
This MOSFET is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 10A. It is commonly used in power conversion, motor control, and other switching applications.

Manufacturer

The STD10N60M2 is manufactured by STMicroelectronics, a global semiconductor company. Founded in 1987, STMicroelectronics specializes in creating a wide range of semiconductor solutions, including power management, microcontrollers, and sensors. The company is known for its innovative technologies that serve various sectors such as automotive, industrial, personal electronics, and communication. STMicroelectronics is recognized for its commitment to sustainability and advancing technology that enhances energy efficiency and performance.

Application

The STD10N60M2 is a N-channel MOSFET primarily used in power electronics applications. Its key areas include switch-mode power supplies, LED drivers, motor control circuits, and high-frequency inverters. It is suitable for industrial, automotive, and consumer electronics due to its high voltage rating and efficiency in switching applications.

Equivalent

The STD10N60M2 is an N-channel MOSFET used in power applications. Equivalent products include the IRF840, STP10NK60Z, and 2SK2653. Always verify specifications like voltage, current, and Rds(on) before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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