STB80N20M5

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STB80N20M5

MOSFET N-CH 200V 61A D2PAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™ V
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 61A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 23mOhm @ 30.5A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 104 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 4329 pF @ 50 V
PowerDissipation(Max) 190W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

Vue d'ensemble

Description

The STB80N20M5 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. With a voltage rating of 200V and a continuous drain current capability of 80A, it is suitable for power management and switching applications in various electronic circuits.
Key features include low on-resistance (R_DS(on)), which minimizes power loss and heat generation, making it ideal for energy-efficient designs. Its fast switching speeds enhance performance in high-frequency applications. The device is typically housed in a TO-220 package, facilitating effective thermal management.
Applications of the STB80N20M5 include power supplies, motor drives, and converters, where reliable performance and thermal stability are crucial. It is particularly beneficial in automotive, industrial, and consumer electronics sectors.
Overall, the STB80N20M5 is a versatile component for designers seeking efficient power electronic solutions.

Features

The STB80N20M5 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 200V.
2. Current Rating: Continuous drain current (I_D) of up to 80A, suitable for handling high power.
3. R_DS(on): Low on-resistance (approximately 0.025Ω at V_GS = 10V), which minimizes power loss and enhances efficiency.
4. Gate Threshold Voltage: V_GS(th) typically ranges from 2V to 4V, allowing for easier drive from low-voltage control signals.
5. Package Type: Available in TO-220 package, facilitating heat dissipation and easy mounting.
6. Thermal Performance: High thermal stability with a maximum junction temperature of 175°C.
7. Fast Switching: Suitable for applications requiring fast switching speeds, benefiting high-frequency operations.
These features make the STB80N20M5 ideal for applications like motor control, DC-DC converters, and power management systems.

Package

The STB80N20M5 is available in a TO-220 package type. This package provides excellent thermal performance and is commonly used for power MOSFET applications.

Pinout

The STB80N20M5 is a N-channel power MOSFET with a pin count of 3. Its pin configuration is as follows:
1. Gate (G): This pin controls the transistor's on/off state by applying a voltage.
2. Drain (D): The drain pin is where the current flows out of the MOSFET when it is in the on state.
3. Source (S): The source pin is where the current enters the MOSFET.
This device is designed for applications like switching power supplies, motor drives, and other high-efficiency power management solutions. It features low on-resistance and fast switching capabilities, making it suitable for high-performance tasks.

Manufacturer

The STB80N20M5 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor products, including discrete and power devices, microcontrollers, and sensors. The company serves various markets such as automotive, industrial, consumer electronics, and telecommunications. Founded in 1987, STMicroelectronics is headquartered in Geneva, Switzerland, and operates in numerous countries, focusing on innovation and sustainability in its product offerings.

Application

The STB80N20M5 is a N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. DC-DC Converters: Efficient switching in power supply circuits.
2. Motor Drives: Control of electric motors in industrial and automotive applications.
3. Power Inverters: Conversion of DC to AC in renewable energy systems.
4. Lighting: LED drivers and dimming applications.
5. Consumer Electronics: Power regulation in devices like computers and TVs.
Its high voltage and current handling capabilities make it suitable for these applications.

Equivalent

The STB80N20M5 is an N-channel MOSFET. Equivalent products include the IRF320, MTN80N20, and FQP80N20. Always check the datasheets for specific ratings like Vds, Id, Rds(on), and package type to ensure compatibility with your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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