STB6NK60ZT4

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STB6NK60ZT4

MOSFET N-CH 600V 6A D2PAK

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Spécifications

Supplier STMicroelectronics
Package Tape & Reel (TR),Cut Tape (CT)
Series SuperMESH™
ProductStatus Not For New Designs
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.2Ohm @ 3A, 10V
Vgs(th)(Max)@Id 4.5V @ 100µA
GateCharge(Qg)(Max)@Vgs 46 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 905 pF @ 25 V
PowerDissipation(Max) 110W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

Vue d'ensemble

Description

The STB6NK60ZT4 is a high-voltage N-channel MOSFET designed for various power applications, especially in switching and inverter circuits. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of up to 6A, making it suitable for high-efficiency power management systems.
This MOSFET is characterized by low on-resistance (R_DS(on)), which reduces conduction losses and improves thermal performance. It typically has a fast switching speed, allowing for efficient operation in applications such as motor drives, power supplies, and electronic ballast systems.
The device is housed in a TO-220 package, providing good thermal dissipation and ease of mounting on heatsinks. Its gate threshold voltage (V_GS) is compatible with standard drive circuits, ensuring ease of integration into existing designs. Overall, the STB6NK60ZT4 is a versatile component offering reliable performance and efficiency in high-voltage applications.

Features

The STB6NK60ZT4 is a N-channel MOSFET designed for high-voltage applications. Key features include:
- Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage power supply designs.
- Current Rating: It can handle a continuous drain current (I_D) of up to 6A, providing versatility in various applications.
- On-Resistance: It has a low on-resistance (R_DS(on)), typically around 1.5Ω, which helps reduce power losses and improve efficiency.
- Gate-Source Threshold Voltage: The V_GS(th) is around 2-4V, allowing for easier drive compatibility with logic-level signals.
- Package: Available in a TO-220 package, which aids in heat dissipation and simplifies mounting in power electronics.
This MOSFET is ideal for applications like switch-mode power supplies, motor drivers, and other high-efficiency circuits, ensuring reliable performance under demanding conditions.

Package

The STB6NK60ZT4 is packaged in a TO-220 form factor, which is a type of through-hole package commonly used for power semiconductor devices. This package type allows for efficient heat dissipation and is suitable for high-power applications.

Pinout

The STB6NK60ZT4 is an N-channel MOSFET with a total of 5 pins. Its pin configuration and functions are as follows:
1. Gate (G): Controls the MOSFET's switching; a voltage applied here turns the device on or off.
2. Drain (D): The main current-carrying terminal; current flows from the drain to the source when the MOSFET is on.
3. Source (S): The terminal through which the current exits the MOSFET; connects to ground or the negative side of the load.
4. Body Diode: Integrated within the device, it allows current to flow in the reverse direction when the MOSFET is off.
This device is commonly used in power switching applications due to its high voltage rating (600V) and low on-resistance, making it suitable for applications like motor drives, power supplies, and lighting control.

Manufacturer

The manufacturer of the STB6NK60ZT4 is STMicroelectronics. STMicroelectronics is a global semiconductor company headquartered in Geneva, Switzerland. It specializes in the design and production of a wide range of semiconductor products, including microcontrollers, sensors, power management devices, and discrete components. The company serves various industries, including automotive, industrial, consumer electronics, and telecommunications. STMicroelectronics is known for its innovation in analog, digital, and mixed-signal technology, focusing on energy-efficient solutions and advanced manufacturing processes.

Application

The STB6NK60ZT4 is a N-channel MOSFET primarily used in power electronics applications. Its main areas include switching power supplies, motor control, and automotive applications such as electric vehicles and battery management systems. It is also utilized in industrial equipment, lighting control, and renewable energy systems like photovoltaic inverters due to its high efficiency and ability to handle high voltage and current.

Equivalent

The STB6NK60ZT4 is a N-channel MOSFET with a voltage rating of 600V and a current rating of 6A. Equivalent products include the IRF840, MTP6N60E, and FQP6N60. Always verify specifications such as Rds(on), gate threshold voltage, and package type before substitution.

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