STB6N80K5

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STB6N80K5

MOSFET N-CH 800V 4.5A D2PAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series SuperMESH5™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 800 V
Current-ContinuousDrain(Id)@25°C 4.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.6Ohm @ 2A, 10V
Vgs(th)(Max)@Id 5V @ 100µA
GateCharge(Qg)(Max)@Vgs 7.5 nC @ 10 V
Vgs(Max) 30V
InputCapacitance(Ciss)(Max)@Vds 255 pF @ 100 V
PowerDissipation(Max) 85W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D²PAK (TO-263)

Vue d'ensemble

Description

The STB6N80K5 is a high-voltage, N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 800 volts and offers a continuous drain current (I_D) of up to 6 amps. This MOSFET is characterized by its low on-resistance (R_DS(on)), which enhances efficiency in switching applications, reducing power losses during operation.
Typically used in power supplies, motor controls, and other high-voltage switching applications, the STB6N80K5 provides fast switching speeds, making it suitable for applications requiring rapid turn-on and turn-off cycles. The device is packaged in a TO-220 format, ensuring effective heat dissipation during operation.
Its robust design includes an avalanche rating and is capable of handling high levels of energy, making it reliable for demanding environments. Overall, the STB6N80K5 is an essential component for engineers looking to build efficient and reliable high-voltage systems.

Features

The STB6N80K5 is a power MOSFET designed for high-voltage applications. Key features include:
- Voltage Rating: 800V, suitable for high-voltage circuits.
- Current Rating: 6A continuous drain current, allowing for significant power handling.
- RDS(on): Low on-resistance (typically around 0.8Ω), which minimizes conduction losses and improves efficiency.
- Gate-Source Voltage: Maximum gate-source voltage of ±30V, providing flexibility in gate driving.
- Package Type: Available in TO-220 and DPAK packages, facilitating easy heat dissipation and integration into various designs.
- Fast Switching: High-speed switching capabilities, beneficial for applications in power supplies and converters.
- Thermal Resistance: Low thermal resistance, enhancing performance under high load conditions.
These features make the STB6N80K5 suitable for applications in power converters, inverters, and other high-voltage electronic circuits.

Package

The STB6N80K5 is typically packaged in a TO-220 form factor. This package type is designed for high-power applications, providing efficient heat dissipation and easy mounting options for robust thermal management in electronic circuits.

Pinout

The STB6N80K5 is an N-channel MOSFET used primarily in power applications. It features a pin count of 3. The functions of the pins are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source, thus turning the device on.
2. Drain (D): This pin is where the load current flows into the device. When the MOSFET is turned on, current can flow from the drain to the source.
3. Source (S): This pin is the output terminal where the current exits the MOSFET to the load.
The STB6N80K5 is designed for high-voltage applications, with a maximum drain-source voltage of 800V and a continuous drain current capability of 6A. Its low on-state resistance and high-speed switching make it suitable for power management applications.

Manufacturer

The STB6N80K5 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is headquartered in Geneva, Switzerland, and is known for designing, developing, manufacturing, and marketing a broad range of semiconductor products. They serve various markets, including automotive, industrial, consumer electronics, and communication. The company is recognized for its innovation in power management, microcontrollers, sensors, and other essential electronic components. STMicroelectronics focuses on sustainability and advancing technology to enhance the functionality and efficiency of electronic devices.

Application

The STB6N80K5 is an N-channel MOSFET primarily used in power electronics applications. Its application areas include switch-mode power supplies (SMPS), motor control, inverters, and lighting control circuits. It is suitable for high-voltage (800V) and high-current (6A) operations, making it ideal for industrial automation, renewable energy systems, and consumer electronics where efficient power management is essential.

Equivalent

The STB6N80K5 is a N-channel MOSFET with a voltage rating of 800V and a current rating of 6A. Equivalent products include:
1. IRF840 - N-channel MOSFET, 500V, 8A.
2. MTP6N80E - N-channel MOSFET, 800V, 6A.
3. FQP8N80C - N-channel MOSFET, 800V, 8A.
4. BTA6N80 - N-channel MOSFET, 800V, 6A.
Always verify specifications for your specific application before replacement.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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