STB40N60M2

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STB40N60M2

MOSFET N-CH 600V 34A D2PAK

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  • Mfr. Partie #STB40N60M2
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Spécifications

Series MDmesh™ II Plus
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number STB40

Vue d'ensemble

Description

The STB40N60M2 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for applications requiring high voltage and current handling capabilities, specifically rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 40A at a specified temperature.
This MOSFET features low on-resistance (R_DS(on)) for improved efficiency and reduced heat generation, making it suitable for power management in various applications, including switch-mode power supplies, motor drives, and automotive systems.
The STB40N60M2 has a fast switching speed, which enhances its performance in high-frequency applications. Its TO-220 package offers effective thermal management, aiding in the dissipation of heat.
Overall, the STB40N60M2 is ideal for engineers looking for reliable, efficient power solutions in demanding environments.

Features

The STB40N60M2 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: 600V maximum drain-source voltage (VDS), suitable for high-voltage applications.
2. Current Rating: Continuous drain current (ID) of 40A at 25°C, providing robust performance in demanding conditions.
3. RDS(on): Low on-resistance (0.065 ohms at VGS = 10V), resulting in reduced conduction losses and improved efficiency.
4. Gate Threshold Voltage (VGS(th)): Typically between 2V and 4V, enabling effective drive with standard logic levels.
5. Package: Available in a TO-220 package, facilitating heat dissipation and ease of mounting.
6. Fast Switching: Optimized for quick switching applications, enhancing overall circuit performance.
7. Applications: Suitable for use in switch-mode power supplies, motor drivers, and inverter circuits.
This MOSFET combines high efficiency, robustness, and ease of use, making it ideal for various power electronic applications.

Package

The STB40N60M2 is packaged in a TO-220 form factor. This package type is commonly used for power transistors, providing good thermal performance and ease of mounting to heatsinks for heat dissipation.

Pinout

The STB40N60M2 is an N-channel MOSFET designed for power applications. It comes in a TO-220 package with three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows it to turn on (conduct) or off (non-conducting).

2. Drain (D): This pin is the output terminal where the load is connected. When the MOSFET is activated, current can flow from the drain to the source.

3. Source (S): This pin is connected to the ground or negative terminal of the power supply. It serves as the reference point for the gate voltage.
Key specifications include a maximum drain-source voltage (V_DS) of 600V, continuous drain current (I_D) of 40A, and a low on-resistance (R_DS(on)) for efficient operation. The STB40N60M2 is suitable for applications like switch-mode power supplies and motor control.

Manufacturer

The STB40N60M2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design and manufacturing of a wide range of semiconductor solutions, including microcontrollers, power management devices, and analog ICs, serving various sectors such as automotive, industrial, consumer electronics, and communications. The company is known for its innovation in power and energy-efficient technologies, making it a key player in the semiconductor industry globally.

Application

The STB40N60M2 is a high-voltage MOSFET primarily used in applications such as power supplies, motor control, and industrial automation. Its features make it suitable for switch-mode power supplies (SMPS), inverters, and DC-DC converters. Additionally, it can be applied in automotive systems, LED drivers, and other high-efficiency switching applications, benefiting from its low on-resistance and fast switching capabilities.

Equivalent

The STB40N60M2 is a power MOSFET with specific characteristics. Equivalent products include:
1. IRF320 - International Rectifier
2. FQP40N60 - Fairchild Semiconductor
3. MTP40N60 - ON Semiconductor
4. BTA40-600 - Vishay
Ensure to verify specifications such as voltage rating, current rating, and RDS(on) for compatibility in your application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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