STB30N65M5

The STB30N65M5 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications, particularly in power management circuits. It features a maximum drain-source voltage (V_DS) of 650V, a continuous drain current (I_D) of 30A, and a low on-resistance (R_DS(on)) of approximately 0.22 ohms at a gate voltage of 10V.
This MOSFET is part of STMicroelectronics’ M5 series, known for its improved performance and efficiency, making it suitable for applications such as switch-mode power supplies, motor drives, and industrial systems. Its design includes a fast switching capability, which helps to reduce switching losses and improve overall efficiency in high-frequency applications.
Additionally, it comes in a TO-220 package, facilitating easy heat dissipation. The STB30N65M5 is often chosen for its reliability, high-temperature operation capability, and robustness in demanding environments. Overall, it provides an effective solution for designers seeking efficient and reliable power control components.

The STB30N65M5 is a high-performance N-channel MOSFET designed for use in power applications. Key features include:
- Voltage Rating: 650V, making it suitable for high voltage applications.
- Current Rating: 30A continuous drain current, with higher pulsed current capability.
- On-Resistance (RDS(on)): Low on-resistance of approximately 0.35 ohms, ensuring efficient operation and reduced power losses.
- Gate Threshold Voltage (VGS(th)): Low threshold voltage, allowing for effective driving with standard gate voltages.
- Package Type: Available in a TO-220 package, which provides good thermal performance and ease of mounting.
- Fast Switching: Optimized for fast switching applications, enhancing efficiency in power conversion.
- Body Diode: Integrated body diode with a low reverse recovery time, beneficial for applications involving inductive loads.
These features make the STB30N65M5 ideal for applications such as switch-mode power supplies, motor drives, and other power management systems.

The STB30N65M5 is typically available in a TO-220 package type. This package is designed for efficient heat dissipation and is commonly used in power applications.

The STB30N65M5 is a N-channel MOSFET manufactured by STMicroelectronics. It features a pin count of 3. The pins are typically designated as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow between the Drain and Source.

2. Drain (D): This pin is where the load connects. Current flows from the Drain to the Source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative supply in typical applications. It is the reference point for the gate voltage.
The STB30N65M5 is designed for high-voltage applications, with a maximum drain-source voltage (Vds) of 650V and a continuous drain current (Id) rating of up to 30A. It is commonly used in power switching applications, including inverters and motor drives.

The STB30N65M5 is manufactured by STMicroelectronics, a global semiconductor company. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is one of the largest semiconductor companies in the world, specializing in the design and production of a wide range of electronic components and systems. Their products include microcontrollers, power management devices, sensors, and automotive solutions, among others. STMicroelectronics serves various industries, including automotive, consumer electronics, telecommunications, and industrial applications. The company is known for its commitment to innovation and sustainability in the semiconductor sector.

The STB30N65M5 is a N-channel MOSFET used primarily in power electronics applications. Its applications include power supplies, motor drives, and inverter circuits. It is suitable for high-efficiency switching in renewable energy systems, such as solar inverters, as well as in industrial automation and automotive applications, such as electric vehicles. Its low on-resistance and high voltage rating make it ideal for various high-current and high-frequency applications.

The STB30N65M5 is a N-channel MOSFET with a 650V rating and a 30A current capacity. Equivalent products include the Infineon IPP30R650C6, ON Semiconductor NTD30N65R, and Vishay SiHG30N65E. Always check specific parameters like Rds(on) and gate threshold voltage for compatibility.