STB28N60M2

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STB28N60M2

MOSFET N-CH 600V 22A D2PAK

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Spécifications

Series MDmesh™ II Plus
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1440 pF @ 100 V
Power Dissipation (Max) 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number STB28

Vue d'ensemble

Description

The STB28N60M2 is a high-performance N-channel MOSFET designed for various power applications, including industrial and automotive uses. It features a voltage rating of 600V and a continuous drain current of 28A, making it suitable for high-voltage and high-current environments. The device is known for its low on-resistance (RDS(on)), which minimizes power losses and enhances efficiency in switching applications.
With a fast switching speed, the STB28N60M2 is ideal for use in switch-mode power supplies (SMPS), motor drives, and other power management systems. Its robust construction allows it to withstand challenging thermal conditions, ensuring reliability in demanding applications. The MOSFET is packaged in a TO-220 format, which facilitates effective heat dissipation.
Additionally, the STB28N60M2 offers a low gate threshold voltage, enabling easier drive requirements. Overall, this MOSFET is a versatile choice for engineers looking for efficiency and durability in high-voltage power conversion applications.

Features

The STB28N60M2 is a Power MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: 600V, making it suitable for high-voltage switching applications.
2. Current Rating: 28A continuous drain current, allowing for substantial load handling.
3. RDS(on): Low on-resistance of 0.28Ω (typical), which reduces power losses and improves efficiency.
4. Gate Threshold Voltage: 2-4V, facilitating easy drive from low-voltage controllers.
5. Switching Speed: Fast switching capabilities enhance performance in high-frequency applications.
6. Package Type: Available in TO-220 and DPAK packages for versatility in mounting options.
7. Robustness: Designed with enhanced avalanche energy ratings, ensuring reliable operation under fault conditions.
8. Applications: Ideal for power supplies, motor drives, and renewable energy systems.
Overall, the STB28N60M2 offers a combination of high voltage handling, efficient performance, and versatility for various power electronics applications.

Package

The STB28N60M2 is typically packaged in a TO-220 format. This package type is designed for power applications, offering good thermal performance and ease of heat dissipation.

Pinout

The STB28N60M2 is an N-channel MOSFET designed for high voltage applications. It features a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage above the threshold level turns the MOSFET on, allowing current to flow from the drain to the source.
2. Drain (D) - This is the terminal through which the main current flows when the MOSFET is in the 'on' state. It connects to the load.
3. Source (S) - This pin serves as the return path for the current. It is connected to ground or the low side of the circuit.
The STB28N60M2 can handle a maximum drain-source voltage of 600V and a continuous drain current of up to 28A, making it suitable for various switching applications in power electronics.

Manufacturer

The STB28N60M2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor solutions, including integrated circuits, discrete devices, and sensors for various applications such as automotive, industrial, consumer electronics, and communication. The company is known for its innovations in power management, microcontrollers, and analog products, playing a significant role in the electronics industry worldwide.

Application

The STB28N60M2 is a N-channel MOSFET primarily used in high-power applications such as motor drives, power supplies, and industrial control systems. Its low on-resistance and high voltage rating make it suitable for switching applications in automotive electronics, lighting control, and renewable energy systems like solar inverters. Additionally, it can be used in audio amplifiers and other consumer electronics requiring efficient power management.

Equivalent

The STB28N60M2 is a N-channel MOSFET with a 600V rating and 28A continuous drain current. Equivalent products include:
- IRFHC30N60
- MGD30N60
- FGH30N60
- IXFH28N60
Always verify specifications such as voltage, current, and Rds(on) for compatibility in your application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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