STB20NM60D

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STB20NM60D

MOSFET N-CH 600V 20A D2PAK

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Spécifications

Series FDmesh™
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
Power Dissipation (Max) 192W (Tc)
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number STB20

Vue d'ensemble

Description

The STB20NM60D is a N-channel MOSFET designed for high-voltage applications, specifically with a maximum drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 20A. It offers low on-resistance (RDS(on)) typically around 0.24 ohms, making it efficient for power management and switching applications.
The device features a fast switching speed, suitable for use in power supplies, motor drives, and automotive applications. Its insulated gate allows for easier drive control, and it is compatible with standard gate drive circuits.
The STB20NM60D is housed in a TO-220 package, which facilitates heat dissipation and installation on PCBs. With its robust performance characteristics, it is ideal for applications requiring reliable and efficient control of high power.
Overall, the STB20NM60D is a versatile component in the field of power electronics, known for its reliability and efficiency in demanding environments.

Features

The STB20NM60D is a N-channel MOSFET from STMicroelectronics, designed for high-performance switching applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage of 600V, making it suitable for high-voltage applications.
2. Current Rating: The device supports a continuous drain current of up to 20A at 25°C, with a pulsed current capability of 60A.
3. RDS(on): It has a low on-resistance of approximately 0.20 ohms at a gate-source voltage of 10V, ensuring efficient power management and reduced heat generation.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, allowing for easy driving.
5. Package: It comes in a TO-220 package, which facilitates better heat dissipation.
6. Applications: Suitable for use in power supplies, motor drives, and various industrial applications due to its robust characteristics.
This MOSFET is ideal for high-efficiency designs requiring reliable, high-voltage switching capabilities.

Package

The STB20NM60D is typically packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used for power MOSFET applications.

Pinout

The STB20NM60D is an N-channel MOSFET designed for power applications. It has a total of 3 pins, which serve the following functions:
1. Gate (G) - This pin controls the switching of the MOSFET. It receives the input voltage that turns the device on (when positive voltage is applied) or off (when the gate voltage is removed).

2. Drain (D) - This pin connects to the load or the positive side of the circuit. Current flows from the Drain to the Source when the device is turned on.
3. Source (S) - This pin connects to the ground or the negative side of the circuit. It completes the circuit path for current flow when the MOSFET is activated.
The STB20NM60D is commonly used in applications such as power supplies, motor control, and switching circuits due to its high voltage and current capabilities.

Manufacturer

The STB20NM60D is manufactured by STMicroelectronics, a multinational electronics and semiconductor manufacturer headquartered in Geneva, Switzerland. STMicroelectronics is known for designing and producing a wide range of semiconductor products, including microcontrollers, sensors, and power devices. The company serves various sectors, including automotive, industrial, and consumer electronics. STMicroelectronics focuses on innovation and sustainability, aiming to provide solutions that enhance energy efficiency and connectivity in modern technologies.

Application

The STB20NM60D is a high-voltage N-channel MOSFET commonly used in power supply applications, motor drives, and industrial automation. Its key features enable use in switch-mode power supplies (SMPS), inverter circuits, lighting control, and automotive applications. The device excels in high-efficiency switching applications, providing low on-resistance and fast switching capabilities.

Equivalent

The STB20NM60D is a N-channel MOSFET with a voltage rating of 600V and a current rating of 20A. Equivalent products include:
1. IRF840
2. BUK555-600A
3. FQP20N60
4. MTP20N60E
Always verify specifications and suitability for your specific application before substitution.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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