STB20N95K5

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STB20N95K5

MOSFET N-CH 950V 17.5A D2PAK

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Spécifications

Series SuperMESH5™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V
Current - Continuous Drain (Id) @ 25°C 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 330mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number STB20

Vue d'ensemble

Description

The STB20N95K5 is a high-voltage N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power switching applications. It features a maximum drain-source voltage (V_DS) of 950V and a continuous drain current (I_D) rating of 20A, making it suitable for use in high-voltage circuits. Its low on-resistance (R_DS(on)) ensures efficient power delivery and minimal heat generation during operation.
This MOSFET is ideal for applications in power supplies, motor drives, and converters, where high efficiency and reliability are critical. It is packaged in a TO-220 format, facilitating easy heat dissipation and mounting. The STB20N95K5 is characterized by a fast switching speed, which enhances the performance in high-frequency applications.
Overall, it is a versatile component suitable for a range of industrial and consumer electronic applications, providing robust performance in demanding environments.

Features

The STB20N95K5 is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 950V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 20A, allowing it to handle significant power loads.
3. On-Resistance: It boasts a low R_DS(on) of approximately 0.5 Ohm, which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) typically ranges from 2V to 4V, facilitating easy drive requirements.
5. Thermal Management: With a maximum junction temperature of 150°C, it supports robust thermal performance.
6. Package: Available in a TO-220 package, it allows effective heat dissipation and is suitable for various mounting options.
These features make the STB20N95K5 ideal for applications such as switched-mode power supplies, motor drivers, and inverters.

Package

The STB20N95K5 is typically packaged in a TO-220 package type. This package is characterized by its three leads and a metal tab for heat dissipation, making it suitable for power applications.

Pinout

The STB20N95K5 is a N-channel MOSFET with a total of four pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation, allowing it to switch on and off based on the voltage applied.
2. Drain (D): This pin is where the main current flows out of the device. It connects to the load in the circuit.
3. Source (S): This is the terminal through which current enters the MOSFET. It typically connects to the ground or the negative side of the power supply.
4. Body Diode: While not a separate pin, the internal body diode allows current to flow from the source to the drain when the MOSFET is off, protecting against reverse polarity.
The STB20N95K5 is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 950V and a continuous drain current (I_D) of 20A.

Manufacturer

The STB20N95K5 is manufactured by STMicroelectronics, a multinational electronics and semiconductor company. STMicroelectronics designs and manufactures a wide range of semiconductor products, including integrated circuits, microcontrollers, and power devices, serving various industries such as automotive, industrial, consumer electronics, and telecommunications. The company is known for its innovation in semiconductor technology and is headquartered in Geneva, Switzerland. It plays a key role in enabling smart and connected devices through its diverse product portfolio.

Application

The STB20N95K5 is a N-channel power MOSFET used primarily in applications such as motor control, power management, switching power supplies, and renewable energy systems. Its high voltage and current ratings make it suitable for automotive, industrial, and consumer electronics applications where efficient power conversion and thermal performance are essential.

Equivalent

The STB20N95K5 is an N-channel MOSFET rated for 20A and 950V. Equivalent products include the Infineon BSC 20N95 and the ON Semiconductor MTP20N95. Other alternatives include the Vishay SiHG20N95 and the Fairchild FQP20N95. Always check the specific datasheets for detailed specifications and characteristics to ensure compatibility.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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