STB18NM80

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STB18NM80

MOSFET N-CH 800V 17A D2PAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 800 V
Current-ContinuousDrain(Id)@25°C 17A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 295mOhm @ 8.5A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 70 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 2070 pF @ 50 V
PowerDissipation(Max) 190W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D²PAK (TO-263)

Vue d'ensemble

Description

The STB18NM80 is a high-voltage N-channel MOSFET designed for various power applications, particularly in switch-mode power supplies and industrial equipment. It features a voltage rating of 800V and a continuous drain current of 18A, making it suitable for high-efficiency energy conversion.
Key specifications include a low R_DS(on) (on-resistance), which enhances efficiency by minimizing conduction losses, and a fast switching speed, allowing for better performance in high-frequency applications. The device is housed in a TO-220 package, facilitating effective heat dissipation.
The STB18NM80 is ideal for use in applications such as motor control, LED drivers, and power management systems. Its reliability, combined with its robust construction, makes it a popular choice among engineers looking for high-performance MOSFET solutions.
Always consult the datasheet for detailed electrical characteristics and thermal management guidelines to ensure optimal performance in your specific application.

Features

The STB18NM80 is an N-channel power MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (Vds) of 800V, allowing it to handle high-voltage environments.
2. Current Rating: Continuous drain current (Id) of up to 18A, suitable for demanding applications.
3. Low On-Resistance: With a typical Rds(on) of around 0.18Ω at Vgs = 10V, it ensures efficient power handling and minimal heat generation.
4. Fast Switching Speed: Designed for rapid switching applications, enhancing efficiency in circuits.
5. Thermal Resistance: Equipped with a maximum junction temperature of 150°C, providing reliability under thermal stress.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
These characteristics make the STB18NM80 ideal for applications such as switch-mode power supplies, inverters, and motor control systems.

Package

The STB18NM80 is typically packaged in a TO-220 housing. This package type allows for efficient thermal management and is commonly used in power applications for better heat dissipation.

Pinout

The STB18NM80 is an N-channel MOSFET with a pin count of 3. The pins are typically configured as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.

2. Drain (D): The drain pin connects to the load or the circuit that is being controlled. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): The source pin is the terminal through which the current exits the MOSFET. It is usually connected to ground or the lower voltage side of the circuit.
The STB18NM80 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 18A. It is commonly used in power supplies, motor drives, and other high-voltage switching applications.

Manufacturer

The STB18NM80 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor devices, including integrated circuits, sensors, and power management solutions. The company serves various markets such as automotive, industrial, personal electronics, and communication equipment. With a strong focus on innovation and sustainability, STMicroelectronics aims to provide advanced technologies that drive the digital transformation and improve energy efficiency in numerous applications.

Application

The STB18NM80 is a power MOSFET typically used in applications such as switching power supplies, motor control, industrial automation, and automotive systems. Its high voltage and current capabilities make it suitable for power management in devices like inverters, lighting systems, and electric vehicle drives. Additionally, it can be employed in consumer electronics for efficient power conversion and control circuits.

Equivalent

The STB18NM80 is an N-channel MOSFET with a 800V rating and a 18A current capacity. Equivalent products include:
1. IRF840 - 500V, 8A
2. FQP30N80 - 800V, 30A
3. BTA18-800V - 800V, 18A
4. STP18NM80 - 800V, 18A
Ensure to verify specifications like R_DS(on), package type, and application suitability when selecting replacements.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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