SQJ479EP-T1_GE3

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SQJ479EP-T1_GE3

MOSFET P-CH 80V 32A PPAK SO-8

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 80 V
Current-ContinuousDrain(Id)@25°C 32A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 33mOhm @ 10A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 150 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4500 pF @ 25 V
PowerDissipation(Max) 68W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Vue d'ensemble

Description

The SQJ479EP-T1_GE3 is a N-channel MOSFET designed for various power management applications. It features low on-resistance and high-speed switching capabilities, making it suitable for use in power supplies, motor drives, and other high-efficiency circuits. The device typically operates at a voltage rating of up to 30V and can handle a continuous drain current of around 60A, depending on the thermal conditions.
Key specifications include a maximum R_DS(on) value, which contributes to reduced power losses during operation. Its compact package design helps save space on PCBs, making it ideal for modern electronics where size is a consideration. The SQJ479EP-T1_GE3 also offers robust thermal performance, allowing for reliable operation in various environments.
Overall, it is a versatile component for engineers looking to enhance the efficiency and performance of their electronic designs.

Features

The SQJ479EP-T1_GE3 is a N-channel MOSFET designed primarily for use in power management applications. Key features include:
1. Voltage Rating: Typically has a drain-source voltage (VDS) of around 30V.
2. Current Rating: Capable of handling high continuous drain current (ID), often around 50A.
3. Low RDS(on): Offers low on-resistance, typically in the range of a few milliohms, which improves efficiency by reducing power loss.
4. Fast Switching: Designed for high-speed operation, suitable for switching applications in power supplies, converters, and motor drives.
5. Thermal Performance: Equipped with a robust thermal performance, allowing for effective heat dissipation.
6. Package Type: Generally available in a TO-220 or similar package, facilitating easy mounting and heat sinking.
Overall, the SQJ479EP-T1_GE3 is suitable for applications requiring efficient switching and high reliability in compact designs.

Package

The SQJ479EP-T1_GE3 is packaged in a DPAK (also known as TO-252) package type. This surface-mount package is designed for power MOSFET applications, offering efficient thermal performance and compact size suitable for various electronic circuits.

Pinout

The SQJ479EP-T1_GE3 is a MOSFET transistor packaged in a TO-220 format. It typically has three pins. The functions of these pins are as follows:
1. Gate (G): This pin controls the MOSFET operation. A voltage applied here turns the device on or off.
2. Drain (D): This pin connects to the load. The current flows out through this pin when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit.
This device is commonly used in power management applications due to its efficient switching capabilities. For specific pin configurations, refer to the manufacturer's datasheet.

Manufacturer

The SQJ479EP-T1_GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of electronic components, specializing in resistors, capacitors, inductors, diodes, and MOSFETs, among other products. Founded in 1962, the company serves a diverse range of industries, including automotive, industrial, telecommunications, and consumer electronics. Vishay is known for its commitment to innovation and quality in semiconductor and passive component technologies, making it a key player in the electronics supply chain. Its products are widely used in various applications due to their reliability and performance.

Application

The SQJ479EP-T1_GE3 is an N-channel MOSFET suitable for various applications, including power management, voltage regulation, and switching circuits in devices like DC-DC converters and motor drivers. Its low on-resistance and high efficiency make it ideal for automotive, industrial, and consumer electronics applications.

Equivalent

The SQJ479EP-T1_GE3 is an N-channel MOSFET. Equivalent products include the BSS138, IRLZ44N, and STP16NF06. These alternatives may vary in specifications such as voltage rating, current capacity, and on-resistance, so it’s essential to check their datasheets for compatibility with your specific application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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