SPW55N80C3

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SPW55N80C3

MOSFETs N-Ch 850V 54.9A TO247-3

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Spécifications

Packaging Tube
Standard Pack Qty 240

Vue d'ensemble

Description

The SPW55N80C3 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It has a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 55A at a specified temperature. This device is particularly suited for use in power supplies, motor drives, and industrial applications due to its high efficiency and fast switching capabilities.
Key features include a low on-resistance (R_DS(on)), which reduces power losses during operation, and a high thermal performance, allowing for effective heat dissipation. The SPW55N80C3 typically comes in a TO-220 package, facilitating easy heat sinking in circuit designs. Its gate threshold voltage (V_GS(th)) is designed to ensure reliable switching with standard gate drive voltages.
Overall, the SPW55N80C3 is ideal for applications that require robust performance in a compact form factor, making it a popular choice among engineers in power electronics.

Features

The SPW55N80C3 is a high-performance N-channel MOSFET designed for use in various power applications. Key features include:
1. Voltage Rating: Rated for a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. Continuous Drain Current: Offers a continuous drain current (I_D) of 55A, allowing for significant load handling.
3. Low On-Resistance: Features a low R_DS(on) of around 0.18Ω, which enhances efficiency by reducing power loss during operation.
4. High Speed: Fast switching capabilities make it ideal for applications such as switch-mode power supplies and inverters.
5. Thermal Performance: Equipped with a high thermal resistance capability, ensuring reliable operation under varying thermal conditions.
6. Package Type: Typically available in a TO-220 package, facilitating effective heat dissipation and easy mounting.
Overall, the SPW55N80C3 is a robust choice for energy-efficient designs in industrial and consumer electronic applications.

Package

The SPW55N80C3 is typically packaged in a TO-220 format. This package type allows for efficient heat dissipation and is commonly used for high-power applications in MOSFETs.

Pinout

The SPW55N80C3 is an N-channel MOSFET with a pin count of 3. The pins are typically designated as follows:
1. Gate (G): This pin controls the MOSFET's on/off state. When a voltage is applied to the gate, it allows current to flow from the drain to the source.
2. Drain (D): This pin is where the current enters the MOSFET. It connects to the load in a typical application.
3. Source (S): This pin is where the current exits the MOSFET. It is usually connected to ground or the negative terminal in a common-source configuration.
The SPW55N80C3 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 55A, making it suitable for various power electronics applications, including switching power supplies and motor drives.

Manufacturer

The SPW55N80C3 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for designing and producing a wide range of semiconductor products, including microcontrollers, power management devices, and analog components. The company serves various sectors, including automotive, industrial, consumer electronics, and communication. Headquartered in Geneva, Switzerland, it operates globally, focusing on innovation and sustainability in technology development.

Application

The SPW55N80C3 is a N-channel MOSFET designed for high-voltage applications. Its primary application areas include power supply circuits, motor drives, and inverters. It is commonly used in switching power supplies, lighting control, and renewable energy systems, such as solar inverters. Its ability to handle high voltages and currents makes it suitable for industrial automation and consumer electronics.

Equivalent

The SPW55N80C3 is an N-channel MOSFET. Equivalent products include:
1. STP55NF80 (STMicroelectronics)
2. IRF840 (Infineon)
3. FQP55N80 (ON Semiconductor)
4. P55N80 (NXP)
5. MTP55N80 (ON Semiconductor)
Ensure to verify specifications such as voltage, current ratings, and package type before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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