SPP04N80C3

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SPP04N80C3

  • Fabricant
  • Mfr. Partie #SPP04N80C3
  • Paquet TO-220-3
  • Fiche de données
  • En stock2838

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Spécifications

Technology Si
Packaging Tube
Brand Infineon Technologies
Product Type MOSFETs
Series CoolMOS C3
Factory Pack Quantity:Factory Pack Quantity 500
Subcategory Transistors
Part # Aliases SP000683152 SPP4N8C3XK SPP04N80C3XKSA1
Mounting Style Through Hole
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Height 15.65 mm
Length 10 mm
Width 4.4 mm
Unit Weight 2 g
Configuration Single
Tradename CoolMOS
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 800 V
Id - Continuous Drain Current 4 A
Rds On - Drain-Source Resistance 1.1 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.1 V
Qg - Gate Charge 31 nC
Pd - Power Dissipation 63 W
Channel Mode Enhancement
Fall Time 12 ns
Rise Time 15 ns
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 72 ns
Typical Turn-On Delay Time 25 ns
Package/Case TO-220-3

Vue d'ensemble

Description

The SPP04N80C3 is a high-voltage N-channel MOSFET designed for power switching applications. With a maximum drain-source voltage (V_DS) of 800V, it is suitable for use in high-voltage circuits. The device features a low on-resistance (R_DS(on)) of 0.4 Ohms, which enhances efficiency by reducing conduction losses. Its high switching speed makes it ideal for applications in power supplies, inverters, and motor drivers.
The SPP04N80C3 is housed in a TO-220 package, which facilitates effective heat dissipation, essential for maintaining performance in demanding conditions. It has a maximum continuous drain current of 4A, making it versatile for various applications. The gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, allowing for easy driving with standard logic levels.
Overall, the SPP04N80C3 is a reliable choice for designers seeking to implement efficient, high-voltage switching solutions in their electronic projects.

Features

The SPP04N80C3 is an N-channel MOSFET designed for high-voltage applications. Here are its key features:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 800V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The maximum continuous drain current (ID) is 4A at a case temperature of 25°C.
3. Low Gate Threshold Voltage: It has a gate threshold voltage (VGS(th)) range of 2V to 4V, allowing for efficient switching.
4. Low On-Resistance: The on-resistance (RDS(on)) is typically low, which minimizes power losses during operation.
5. Fast Switching Speed: It exhibits fast switching characteristics, ideal for applications requiring quick response times.
6. Package Type: It is available in a TO-220 package, which facilitates heat dissipation.
7. Applications: Commonly used in power supplies, motor drivers, and other high-voltage applications.
These features make the SPP04N80C3 a versatile choice for various electronic designs where efficiency and reliability are critical.

Package

The SPP04N80C3 is packaged in a TO-220 case type. This package is designed for high-power applications, providing efficient heat dissipation and easy mounting.

Pinout

The SPP04N80C3 is a high-voltage N-channel MOSFET manufactured by STMicroelectronics. It features a total of three pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the main current-carrying terminal where the output is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the negative side of the load or the ground. Current flows out of the source terminal when the device is activated.
The SPP04N80C3 can handle a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 4A, making it suitable for high-voltage applications.

Manufacturer

The SPP04N80C3 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of electronic components, including microcontrollers, sensors, and power management devices. The company serves various industries, including automotive, industrial, consumer electronics, and communications. With a strong focus on innovation and sustainability, STMicroelectronics plays a key role in advancing technology through high-performance semiconductor solutions.

Application

The SPP04N80C3 is an N-channel MOSFET primarily used in high-voltage applications such as power supplies, motor control, and switching circuits. Its features make it suitable for tasks involving high power and efficiency, including industrial automation, lighting control, and renewable energy systems. Additionally, it can be utilized in inverter circuits, DC-DC converters, and other electronic devices requiring reliable switching performance.

Equivalent

The SPP04N80C3 is an N-channel MOSFET with a 800V voltage rating and a 4A current rating. Equivalent products include:
1. STP04N80F
2. IRF840
3. MTP4N80E
4. FQP4N80C
Always verify specifications like RDS(on), gate charge, and package type for compatibility in your application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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