SPD04N60C3

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SPD04N60C3

MOSFET N-CH 600V 4.5A TO252-3

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Spécifications

Supplier Infineon Technologies
Package Bulk
Series CoolMOS™
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 4.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 950mOhm @ 2.8A, 10V
Vgs(th)(Max)@Id 3.9V @ 200µA
GateCharge(Qg)(Max)@Vgs 25 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 490 pF @ 25 V
PowerDissipation(Max) 50W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TO252-3

Vue d'ensemble

Description

The SPD04N60C3 is a high-voltage, N-channel MOSFET designed for switching applications. It is part of the STMicroelectronics product lineup and features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 4A. This device is characterized by its low on-resistance (R_DS(on)), which enhances efficiency in power management applications.
The SPD04N60C3 is suitable for use in various applications, including power supplies, automotive systems, and industrial control circuits. It offers fast switching speeds, making it ideal for high-frequency operation. Additionally, the MOSFET is packaged in a TO-220 format, facilitating heat dissipation and easy integration into electronic designs.
Key specifications include a gate threshold voltage (V_GS(th)) of around 2-4V, which allows for straightforward gate drive requirements. Overall, the SPD04N60C3 is a reliable choice for designers seeking effective high-voltage switching solutions.

Features

The SPD04N60C3 is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 4A, allowing it to manage substantial loads.
3. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, enabling easy interfacing with low-voltage control circuits.
4. R_DS(on): It offers low on-resistance (R_DS(on)), typically around 1.6 ohms at V_GS = 10V, which reduces power losses during operation.
5. Fast Switching: The MOSFET provides fast switching capabilities, making it suitable for applications like switch-mode power supplies and motor drivers.
6. Package: Available in a TO-220 package, facilitating effective heat dissipation.
These features make the SPD04N60C3 a versatile choice for various power management applications.

Package

The SPD04N60C3 is typically packaged in a TO-220 form factor. This package type allows for efficient heat dissipation and is commonly used for power transistors, providing good electrical performance and ease of mounting.

Pinout

The SPD04N60C3 is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output terminal where the current exits the MOSFET when it is turned on.
3. Source (S): This pin is the input terminal where the current enters the MOSFET.
The SPD04N60C3 is designed for high-voltage applications, rated for a maximum drain-source voltage of 600V and a continuous drain current of 4A. It is commonly used in power supply circuits and motor control applications.

Manufacturer

The SPD04N60C3 is manufactured by STMicroelectronics, a multinational semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of electronic components and systems, including microcontrollers, sensors, and power management devices. The company serves various industries, such as automotive, industrial, personal electronics, and communication. STMicroelectronics is known for its innovation in semiconductor technology and its commitment to sustainability and efficiency in electronic solutions.

Application

The SPD04N60C3 is a high-voltage N-channel MOSFET used in various applications, including:
1. Power supplies: Switching power converters and regulators.
2. Motor control: Drives for DC and AC motors.
3. Lighting: LED drivers and dimming circuits.
4. Industrial automation: Relay drivers and control circuits.
5. Renewable energy: Solar inverters and UPS systems.
Its ability to handle high voltage and current makes it suitable for these applications.

Equivalent

The SPD04N60C3 is a 600V, 4A IGBT. Equivalent products include:
1. IRG4BC30KD - 600V, 4A IGBT
2. FGA25N60 - 600V, 25A IGBT
3. STGW30NC60 - 600V, 30A IGBT
Ensure to verify the specific parameters, such as current ratings and switching characteristics, for compatibility with your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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