SPB80P06PG

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SPB80P06PG

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Spécifications

Manufacturer Infineon Technologies
Package TO-263-3
Operating Temperature -55℃~+175℃
RDS(on) 23mΩ@10V,64A
Drain to Source Voltage 60V
Pd - Power Dissipation 340W
Current - Continuous Drain(Id) 80A
Reverse Transfer Capacitance (Crss@Vds) 546pF@25V
Input Capacitance(Ciss@Vds) 5.033nF@25V
Gate Threshold Voltage (Vgs(th)@Id) 3V
Gate Charge(Qg) 173nC@48V
Number 1 piece P-channel

Vue d'ensemble

Description

SPB80P06PG is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) rating of 80A, and a low on-resistance (R_DS(on)), which enhances its efficiency in switching and amplification tasks. This MOSFET is commonly used in power supplies, motor drivers, and other switching applications due to its high performance and reliability.
The device has a fast switching speed, making it suitable for high-frequency applications. It is typically housed in a TO-220 package, which facilitates heat dissipation. The SPB80P06PG is also noted for its thermal stability and ability to operate under a wide range of temperatures, making it versatile for various electronic designs. Overall, it is a crucial component for engineers looking to optimize power management in their circuits.

Features

The SPB80P06PG is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage of 60V, suitable for various applications.
2. Current Rating: Can handle continuous drain current up to 80A, making it ideal for high power applications.
3. RDS(on): Low on-resistance (typically 0.008Ω), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Low gate threshold voltage (2-4V), allowing easy drive from low-voltage logic levels.
5. Package: Available in a TO-220 package, enhancing thermal performance and ease of heat dissipation.
6. Fast Switching: Designed for high-speed switching applications, beneficial in power conversion and motor control systems.
7. Robustness: Offers good thermal stability and reliability in harsh environments.
These features make the SPB80P06PG suitable for applications such as power supplies, DC-DC converters, and motor drivers.

Package

The SPB80P06PG is packaged in a TO-220 form factor. This package type is designed for power transistors, providing efficient heat dissipation and easy mounting on heat sinks for enhanced thermal management.

Pinout

The SPB80P06PG is a P-channel MOSFET with a pin count of 3. Its typical pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's operation. A negative voltage applied to the gate relative to the source can switch the device on.
2. Source (S): This is the terminal where the power supply connects. In P-channel MOSFETs, the source is connected to the higher voltage.
3. Drain (D): This pin connects to the load. The current flows from the source to the drain when the MOSFET is turned on.
Key specifications include a maximum drain-source voltage (V_DS) of -60V and a continuous drain current (I_D) of up to -80A, making it suitable for high-power applications. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.

Manufacturer

The SPB80P06PG is a power MOSFET manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and manufactures a wide range of semiconductor products, including integrated circuits, discrete devices, and sensors used in various applications such as automotive, industrial, consumer electronics, and IoT. The company is known for its innovation in technology and has a strong focus on sustainability and energy efficiency in its product offerings. Established in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics operates manufacturing facilities and research centers worldwide, serving diverse markets with high-performance semiconductor solutions.

Application

The SPB80P06PG is a P-channel MOSFET primarily used in power management applications, including battery management systems, DC-DC converters, and load switching. Its high voltage and current handling capabilities make it suitable for automotive, industrial, and consumer electronics applications, where it can efficiently control power delivery and enhance energy efficiency.

Equivalent

The SPB80P06PG chip is a power MOSFET. Equivalent products include the IRF840, FQP30N06L, STP40NF06, and BUK7YPPH. It's essential to verify specifications such as voltage, current, and package type when selecting an equivalent. Always consult the datasheets for detailed comparisons to ensure compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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