SPA11N65C3

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SPA11N65C3

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Spécifications

Packaging Tube
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Factory Pack Quantity:Factory Pack Quantity 500
Technology Si
Mounting Style Through Hole
Package / Case TO-220FP-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 11 A
Rds On - Drain-Source Resistance 380 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3.9 V
Qg - Gate Charge 45 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 33 W
Channel Mode Enhancement
Tradename CoolMOS
Configuration Single
Fall Time 5 ns
Height 16.15 mm
Length 10.65 mm
Rise Time 5 ns
Series CoolMOS C3
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 44 ns
Typical Turn-On Delay Time 10 ns
Width 4.85 mm
Part # Aliases SPA11N65C3XK SP000216318 SPA11N65C3XKSA1
Unit Weight 0.068784 oz

Vue d'ensemble

Description

The SPA11N65C3 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power switching applications. It has a voltage rating of 650 volts and a continuous drain current of up to 11 amps, making it suitable for high-voltage circuits. The device features low on-resistance, which minimizes power loss during operation, enhancing overall efficiency.
Key specifications include a maximum gate-source voltage of ±20V, a threshold voltage (Vgs(th)) that typically ranges between 2V and 4V, and a fast switching speed, which makes it ideal for applications like SMPS (Switched-Mode Power Supplies), motor drives, and other power management systems.
The SPA11N65C3 is packaged in a TO-220 form factor, allowing for efficient heat dissipation, which is crucial in high-power applications. Its robust design and reliability make it a popular choice in various industrial and consumer electronic applications.

Features

The SPA11N65C3 is an N-channel MOSFET that features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 11A. Key features include:
1. Low On-Resistance (R_DS(on)): Offers low on-resistance for efficient operation, reducing power loss.
2. High Switching Speed: Designed for fast switching applications, making it suitable for high-frequency operations.
3. Thermal Performance: Features a high maximum junction temperature and enhanced thermal stability.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, allowing for efficient drive with lower gate voltages.
5. Package Type: Available in TO-220 or similar packages, providing good heat dissipation.
6. Applications: Ideal for use in power supplies, motor drives, and various switching applications.
Overall, the SPA11N65C3 is well-suited for high-voltage applications requiring efficient and reliable performance.

Package

The SPA11N65C3 is typically packaged in a TO-220 form factor. This package type allows for efficient heat dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The SPA11N65C3 is an N-channel MOSFET with a total of 3 pins. Its pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on and off.
2. Drain (D): This pin connects to the load, where the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is connected to ground or the negative side of the circuit. Current flows into this pin when the MOSFET is activated.
The SPA11N65C3 is typically used in power applications, capable of handling high voltage (650V) and high current (11A), making it suitable for various switching and amplification tasks in electronic circuits.

Manufacturer

The SPA11N65C3 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor devices, including integrated circuits, microcontrollers, and power management products. The company serves various markets, including automotive, industrial, personal electronics, and communication. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its commitment to innovation and sustainability within the semiconductor industry.

Application

The SPA11N65C3 is a high-voltage N-channel MOSFET commonly used in power electronics applications. Its key areas include switch-mode power supplies, motor drivers, DC-DC converters, and inverters. It is suitable for applications requiring high efficiency and fast switching, such as renewable energy systems, electric vehicles, and industrial automation. Additionally, it can be utilized in lighting control and power management systems.

Equivalent

The SPA11N65C3 is a 650V N-channel MOSFET. Equivalent products include:
1. STP11N65M5 (STMicroelectronics)
2. IRF274N (Infineon)
3. FQP11N65 (ON Semiconductor)
4. MBRF11N65 (Mitsubishi)
Always verify specifications like R_DS(on), V_GS(th), and package type for compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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