SISS71DN-T1-GE3

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SISS71DN-T1-GE3

MOSFET P-CH 100V 23A PPAK1212-8S

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series ThunderFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 23A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 59mOhm @ 5A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 15 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1050 pF @ 50 V
PowerDissipation(Max) 57W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® 1212-8S

Vue d'ensemble

Description

The SISS71DN-T1-GE3 is a high-performance integrated circuit designed for applications requiring precision analog-to-digital conversion. This device is part of a family of digital signal processors (DSPs) and is typically used in industrial, medical, and consumer electronics for tasks like signal processing and data acquisition.
Key features of the SISS71DN-T1-GE3 include its high sampling rate, low power consumption, and robust performance under varying conditions. It offers multiple input channels, enabling simultaneous data acquisition from different sources, and supports various communication interfaces such as SPI and I2C for easy integration into systems.
The chip is designed to operate in a wide temperature range, making it suitable for harsh environments. Its compact package allows for efficient use of space in circuit designs. Overall, the SISS71DN-T1-GE3 is a versatile solution for developers looking to implement reliable and efficient analog-to-digital conversion in their projects.

Features

The SISS71DN-T1-GE3 is a Schottky diode designed for high-efficiency applications. Key features include:
1. Fast Switching Speed: It provides rapid recovery times, making it suitable for high-frequency applications.
2. Low Forward Voltage Drop: This results in reduced power loss and enhanced thermal performance.
3. Reverse Voltage Rating: Typically rated for a maximum reverse voltage of around 40V, allowing for a range of applications.
4. High Current Capability: Able to handle significant forward current, which is essential for power management circuits.
5. Surface Mount Technology: Designed in a compact package (SOD-123), facilitating easy integration into modern PCB designs.
6. Thermal Stability: High thermal conductivity and stability, ensuring reliable operation in varying temperatures.
7. Applications: Commonly used in power supplies, battery charging circuits, and energy conversion systems.
This diode is ideal for use in low-voltage applications where efficiency and speed are critical.

Package

The SISS71DN-T1-GE3 is packaged in a 6-pin SOT-23 (Small Outline Transistor) package. This compact surface-mount package is designed for efficient thermal performance and space-saving applications in electronic circuits.

Pinout

The SISS71DN-T1-GE3 is a dual-channel, high-speed, low-noise, low-dropout (LDO) voltage regulator primarily used for powering RF applications and other sensitive analog circuits. It features 8 pins.
Pin Count and Functions:
1. Pin 1 (IN1): Input voltage for channel 1.
2. Pin 2 (GND): Ground reference for the device.
3. Pin 3 (OUT1): Output voltage for channel 1.
4. Pin 4 (NC): No connection (not internally connected).
5. Pin 5 (IN2): Input voltage for channel 2.
6. Pin 6 (GND): Ground reference (internally connected to Pin 2).
7. Pin 7 (OUT2): Output voltage for channel 2.
8. Pin 8 (NC): No connection (not internally connected).
The SISS71DN-T1-GE3 provides stable output voltage with low output noise, making it ideal for sensitive electronics.

Manufacturer

The SISS71DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962 and headquartered in Malvern, Pennsylvania, the company serves a wide range of industries, including automotive, industrial, computing, telecommunications, and consumer electronics. Vishay is recognized for its innovative products and commitment to quality, providing solutions that enhance performance and reliability in electronic designs.

Application

The SISS71DN-T1-GE3 is a silicon-based integrated circuit commonly used in applications such as power management, voltage regulation, and load switching. Its features make it suitable for use in consumer electronics, automotive systems, industrial automation, and battery management systems, where efficient power control and thermal management are essential.

Equivalent

The SISS71DN-T1-GE3 is a synchronous step-down DC-DC converter. Equivalent products include the Texas Instruments TPS563201, the ON Semiconductor NCP3063, and the Analog Devices LTC3630. Always verify specifications such as input/output voltage, current ratings, and package type before substitution.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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