SISS61DN-T1-GE3

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SISS61DN-T1-GE3

MOSFET P-CH 20V 30.9/111.9A PPAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET® Gen III
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 30.9A (Ta), 111.9A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 1.8V, 4.5V
RdsOn(Max)@IdVgs 3.5mOhm @ 15A, 4.5V
Vgs(th)(Max)@Id 900mV @ 250µA
GateCharge(Qg)(Max)@Vgs 231 nC @ 10 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 8740 pF @ 10 V
PowerDissipation(Max) 5W (Ta), 65.8W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® 1212-8S

Vue d'ensemble

Description

The SISS61DN-T1-GE3 is a type of silicon photomultiplier (SiPM) manufactured by ON Semiconductor. It is designed for light detection applications, particularly in fields like medical imaging, high-energy physics, and radiation detection. The device features high sensitivity, low noise, and a compact size, making it suitable for various photonic research and industrial applications.
Key specifications typically include a breakdown voltage, photon detection efficiency, and a gain factor, which defines its responsiveness to incoming light. The SiPM operates in a Geiger mode, allowing it to detect single photons, which is crucial for applications requiring precision and accuracy.
This device is part of a growing trend towards solid-state light detection technology, offering advantages over traditional photomultiplier tubes, such as robustness, immunity to magnetic fields, and ease of integration into electronic systems. Overall, the SISS61DN-T1-GE3 represents a versatile and advanced option for researchers and engineers working with light-based technologies.

Features

The SISS61DN-T1-GE3 is a high-performance Schottky diode known for its low forward voltage drop and fast switching capabilities. Key features include:
1. Low Forward Voltage: It offers a low forward voltage drop, which enhances efficiency in power applications.
2. High Current Rating: Capable of handling significant forward current, making it suitable for high-power applications.
3. Fast Recovery: The diode exhibits rapid recovery characteristics, minimizing switching losses.
4. Thermal Stability: Designed to operate effectively over a wide temperature range, providing reliability in various conditions.
5. Compact Package: Housed in a compact form factor, allowing for space-efficient designs in electronic circuits.
6. High Reverse Voltage: Can withstand substantial reverse voltages, enhancing its applicability in diverse circuits.
This diode is ideal for applications in power supplies, DC-DC converters, and other electronic devices requiring efficient rectification and fast switching.

Package

The SISS61DN-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) package type. This package type features eight pins and is designed for surface mounting on circuit boards, providing a compact footprint suitable for various applications.

Pinout

The SISS61DN-T1-GE3 is a dual N-channel MOSFET with a pin count of 6. Its primary function is to provide efficient switching for various power management applications, including DC-DC converters and motor control.
The pin configuration typically includes:
1. Gate1 - Controls the first MOSFET's switching.
2. Drain1 - Drain terminal for the first MOSFET.
3. Source1 - Source terminal for the first MOSFET.
4. Gate2 - Controls the second MOSFET's switching.
5. Drain2 - Drain terminal for the second MOSFET.
6. Source2 - Source terminal for the second MOSFET.
The device features low on-resistance and fast switching speeds, making it suitable for applications that require efficient power handling.

Manufacturer

The manufacturer of the SISS61DN-T1-GE3 is Vishay Intertechnology, Inc. Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Founded in 1962, the company is known for its extensive portfolio of products, which include resistors, capacitors, inductors, diodes, and integrated circuits, serving a wide range of industries such as automotive, industrial, telecommunications, and consumer electronics. Vishay is recognized for its innovation in technology and commitment to quality, making it a key player in the electronics component market.

Application

The SISS61DN-T1-GE3 is a high-speed, low-voltage Schottky barrier diode primarily used in applications such as power management, rectification in DC-DC converters, and inrush current limiters. Its fast switching capabilities make it suitable for use in switching power supplies, battery charging circuits, and solar inverters. Its low forward voltage drop also enhances efficiency in these applications.

Equivalent

The SISS61DN-T1-GE3 is a voltage regulator from Vishay. Equivalent products can include similar low-dropout (LDO) regulators from other manufacturers, such as the LM317 from Texas Instruments, the LT1086 from Analog Devices, or the MIC2940 from Microchip. Ensure to compare specifications like output current, voltage dropout, and package type to verify compatibility.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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