SIS443DN-T1-GE3

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SIS443DN-T1-GE3

MOSFET P-CH 40V 35A PPAK 1212-8

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 35A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 11.7mOhm @ 15A, 10V
Vgs(th)(Max)@Id 2.3V @ 250µA
GateCharge(Qg)(Max)@Vgs 135 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4370 pF @ 20 V
PowerDissipation(Max) 3.7W (Ta), 52W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® 1212-8

Vue d'ensemble

Description

The SIS443DN-T1-GE3 is a dual N-channel MOSFET designed for use in power management applications. It features low on-resistance, enabling efficient conduction and reduced power loss, which is ideal for high-efficiency designs. This MOSFET is capable of handling high currents and voltages, making it suitable for applications in power supplies, battery management systems, and consumer electronics.
Its fast switching capabilities help in minimizing switching losses, contributing to overall system performance. The device comes in a compact package, allowing for space-saving designs in PCB layouts. The SIS443DN-T1-GE3 is characterized by its thermal stability and reliability, which are essential for demanding applications.
In summary, the SIS443DN-T1-GE3 is a versatile MOSFET suited for various high-efficiency electronic applications, combining performance, reliability, and compact design.

Features

The SIS443DN-T1-GE3 is a dual N-channel MOSFET designed for power management applications. Key features include:
1. Low On-Resistance (RDS(on)): Ensures efficient operation with minimal power loss.
2. High Speed Switching: Suitable for high-frequency applications, enhancing efficiency in power conversion.
3. Maximum Drain-Source Voltage (VDS): Typically rated at 30V, enabling use in a variety of circuits.
4. Continuous Drain Current (ID): Supports high current loads, making it suitable for demanding applications.
5. Thermal Stability: Designed to operate effectively at elevated temperatures, ensuring reliability.
6. Small Package Size: Available in compact surface-mount packages for space-constrained designs.
7. Low Gate Charge (Qg): Reduces switching losses, improving overall efficiency in power supply circuits.
These features make the SIS443DN-T1-GE3 ideal for applications such as DC-DC converters, power management systems, and motor drivers.

Package

The SIS443DN-T1-GE3 is available in a lead-free, compact 8-pin SOIC (Small Outline Integrated Circuit) package type. This package is designed for surface mounting, providing efficient space utilization and thermal performance for various electronic applications.

Pinout

The SIS443DN-T1-GE3 is an N-channel MOSFET that features a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the MOSFET's switching function.
2. Drain (D) - The terminal through which current flows out when the device is turned on.
3. Source (S) - The terminal through which current flows into the device.
The device is designed for applications that require high efficiency and fast switching. It has a low R_DS(on) for reduced power loss during operation. The SIS443DN-T1-GE3 is commonly used in power management, DC-DC converters, and other applications where high-speed switching is essential. Always refer to the specific datasheet for detailed electrical characteristics and maximum ratings.

Manufacturer

The SIS443DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a multinational company that specializes in the production of electronic components, including resistors, capacitors, inductors, and semiconductor devices. Founded in 1962, Vishay operates in various sectors, providing products for applications in automotive, military, telecommunications, and consumer electronics. The company is known for its innovation in passive and active components, contributing to advancements in technology across multiple industries.

Application

The SIS443DN-T1-GE3 is a dual-channel, high-speed, low-voltage analog switch commonly used in applications such as signal routing, audio switching, video signal processing, and data acquisition systems. It is ideal for use in consumer electronics, telecommunications, and automotive electronics where reliable and efficient signal management is required.

Equivalent

The SIS443DN-T1-GE3 is a dual N-channel MOSFET. Equivalent products include the IRF740, FQP30N06L, and AO3400. Be sure to check specifications like voltage, current ratings, and package type to ensure compatibility for your application.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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