SIRA18DP-T1-GE3

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SIRA18DP-T1-GE3

MOSFET N-CH 30V 33A PPAK SO-8

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Spécifications

Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21.5 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 15 V
Power Dissipation (Max) 3.3W (Ta), 14.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIRA18

Vue d'ensemble

Description

SIRA18DP-T1-GE3 is a compact and efficient power supply unit designed for various applications in electronics and electrical systems. It typically features a compact design, which allows for easy integration into different setups. The unit is characterized by its reliability, offering stable output voltage and current, making it suitable for sensitive devices.
Key features often include over-voltage protection, over-current protection, and thermal shutdown capabilities, ensuring safe operation under various conditions. The SIRA18DP-T1-GE3 is commonly used in industrial automation, telecommunications, and consumer electronics, thanks to its versatility and robust performance.
In terms of specifications, it may provide various output ratings, and it's essential to refer to the manufacturer’s datasheet for exact parameters, including input voltage range, efficiency ratings, and operational temperature limits. Overall, the SIRA18DP-T1-GE3 is an ideal choice for users seeking reliable power solutions in compact formats.

Features

The SIRA18DP-T1-GE3 is a high-performance, dual-channel, isolated analog signal isolator from Siemens. Key features include:
1. Isolation: Provides electrical isolation between input and output, enhancing safety and protecting equipment from surges.
2. Input Types: Supports various input signal types, including current and voltage signals, making it versatile for different applications.
3. Wide Range: Capable of handling a broad range of input and output voltage/current levels, accommodating diverse systems.
4. Compact Design: Features a compact form factor suitable for space-constrained environments.
5. High Accuracy: Offers high precision in signal transmission, ensuring reliable data transfer.
6. Robustness: Designed for harsh industrial environments, ensuring durability and longevity.
7. Easy Integration: Compatible with various control systems, simplifying integration into existing setups.
8. LED Indicators: Equipped with LED indicators for easy monitoring of operational status.
This device is ideal for applications requiring safe and reliable signal transmission in industrial automation and control systems.

Package

The SIRA18DP-T1-GE3 is packaged in a surface mount device (SMD) format, specifically in a 8-pin SOIC (Small Outline Integrated Circuit) package. This type of packaging is designed for easy mounting on printed circuit boards.

Pinout

The SIRA18DP-T1-GE3 is a dual N-channel MOSFET in a DPAK (TO-252) package. It has a total of 5 pins. The pin configuration is as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - The drain terminal for the first N-channel MOSFET.
3. Source 1 (S1) - The source terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - The drain terminal for the second N-channel MOSFET, which shares the same source connection as the first.
The source pins (S1 and S2) are typically connected together in applications. This MOSFET is commonly used in power management applications, including switching power supplies and motor control, due to its high efficiency and low on-resistance.

Manufacturer

The SIRA18DP-T1-GE3 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing a wide range of semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its innovations in power semiconductors, microcontrollers, and sensors, contributing significantly to advancements in energy efficiency and connectivity. Infineon operates globally and focuses on sustainability and technology leadership in the semiconductor industry.

Application

The SIRA18DP-T1-GE3 is a solid-state relay suitable for industrial automation, heating control, motor control, and HVAC applications. It is commonly used in systems requiring precise switching, such as temperature regulation, light dimming, and process automation due to its high reliability and fast switching capabilities. Its compact design also makes it suitable for space-constrained environments.

Equivalent

The SIRA18DP-T1-GE3 is a dual-band RF transceiver from NXP Semiconductors. Equivalent products include the SIRA18DP from the same family, and alternatives like the Microchip MRF24J40 or Texas Instruments CC2500, depending on specific application requirements such as frequency, power output, and protocols. Always consult datasheets for compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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