SIR662DP-T1-GE3

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SIR662DP-T1-GE3

MOSFET N-CH 60V 60A PPAK SO-8

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 2.7mOhm @ 20A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 96 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4365 pF @ 30 V
PowerDissipation(Max) 6.25W (Ta), 104W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Vue d'ensemble

Description

The SIR662DP-T1-GE3 is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. It is typically utilized in DC-DC converters, power supplies, and motor control systems. The device features a low on-resistance (RDS(on)), allowing for reduced conduction losses and improved thermal performance.
This MOSFET is characterized by its fast switching capabilities, making it suitable for high-frequency applications. It is housed in a DPAK package, which provides enhanced thermal dissipation and ease of integration into circuits. The SIR662DP-T1-GE3 also includes a robust gate oxide, ensuring reliability under varying conditions.
Overall, this component is ideal for engineers seeking a reliable and efficient solution for demanding power applications, contributing to improved system performance and energy efficiency.

Features

The SIR662DP-T1-GE3 is a high-performance power MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: Supports a drain-source voltage (V_DS) of up to 30V, suitable for low-voltage applications.
2. On-Resistance: A low R_DS(on) value minimizes conduction losses, enhancing overall efficiency.
3. Thermal Performance: It has excellent thermal stability, allowing for effective heat dissipation and operation at high temperatures.
4. Fast Switching: Designed for high-speed switching applications, making it ideal for converters and inverters.
5. Package Type: Available in a compact DPAK package, which aids in space-saving designs.
6. Applications: Commonly used in power supplies, motor drivers, and battery management systems.
These features make the SIR662DP-T1-GE3 a reliable choice for modern electronic devices requiring efficient power handling.

Package

The SIR662DP-T1-GE3 is packaged in a DPAK (TO-252) package type, which is a surface-mount package designed for efficient thermal performance and compact size.

Pinout

The SIR662DP-T1-GE3 is a N-channel MOSFET with a pin count of 8. It is designed for applications such as power management and switching. The pins are typically configured as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output where current flows out when the device is on.
3. Source (S) - The input where current flows in when the device is on.
4. Source (S) - (Note: there are two source pins, typically tied together for current sharing).
5. Gate (G) - (Note: there are two gate pins, often used for better drive capability).
6. Body (B) - Internal body diode.
Additional pins may be used for thermal management or for other functions depending on the specific package and application. The SIR662DP-T1-GE3 is particularly noted for its low on-resistance and fast switching capabilities.

Manufacturer

The SIR662DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in discrete semiconductors and passive components, serving a wide range of industries including automotive, industrial, telecommunications, and consumer electronics. The company specializes in producing a variety of electronic components, including diodes, resistors, capacitors, and MOSFETs, which are essential for circuit design and functionality. Vishay is known for its innovation and reliability in the electronics sector, providing solutions that meet the demands of modern technology.

Application

The SIR662DP-T1-GE3 is a dual N-channel MOSFET primarily used in power management applications, including DC-DC converters, voltage regulators, and battery management systems. Its low on-resistance and high efficiency make it suitable for use in consumer electronics, industrial equipment, and automotive applications where efficient power delivery and thermal performance are critical.

Equivalent

The SIR662DP-T1-GE3 chip is a synchronous buck regulator. Equivalent products include the TPS563201 from Texas Instruments, the LM2596 from Texas Instruments, and the RT8205 from Richtek. When selecting an equivalent, ensure similar specifications for voltage, current, and package type. Always verify compatibility in your specific application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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