SIR622DP-T1-GE3

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SIR622DP-T1-GE3

MOSFET N-CH 150V 51.6A PPAK SO-8

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Spécifications

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series ThunderFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 51.6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 7.5V, 10V
RdsOn(Max)@IdVgs 17.7mOhm @ 20A, 10V
Vgs(th)(Max)@Id 4.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 31 nC @ 7.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1516 pF @ 75 V
PowerDissipation(Max) 104W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Vue d'ensemble

Description

The SIR622DP-T1-GE3 is a dual N-channel MOSFET designed for high-performance applications in power management and switching. It features a low on-resistance, which enhances efficiency and minimizes heat generation during operation. This component is ideally suited for use in various applications, including DC-DC converters, motor drivers, and power supply circuits.
Key specifications include a maximum drain-source voltage of 30V, a continuous drain current rating of up to 62A, and a low gate threshold voltage. Its compact package size contributes to ease of integration in space-constrained designs.
The SIR622DP-T1-GE3 is particularly valued in industries such as consumer electronics, automotive, and industrial applications, where reliable power management is essential. With enhanced thermal performance and fast switching capabilities, it supports high-frequency operations, making it a popular choice among engineers looking to optimize their designs for power efficiency and reliability.

Features

The SIR622DP-T1-GE3 is a high-performance N-channel MOSFET designed for various power management applications. Key features include:
- Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 30V.
- Current Rating: Capable of handling continuous drain current (I_D) of up to 62A, suitable for high-efficiency designs.
- R_DS(on): Low on-resistance (R_DS(on)) helps reduce conduction losses, enhancing overall efficiency.
- Fast Switching: Optimized for fast switching speeds, making it ideal for applications in switching power supplies, DC-DC converters, and motor drives.
- Thermal Performance: It comes in a TO-220 package, which provides good thermal dissipation characteristics.
- Gate Threshold Voltage: Features a low gate threshold voltage, allowing for efficient operation with lower gate drive voltages.
- Applications: Commonly used in power management, power supplies, and automotive applications.
These attributes make the SIR622DP-T1-GE3 suitable for high-performance power electronics.

Package

The SIR622DP-T1-GE3 is packaged in a 6-lead, surface-mount SOIC (Small Outline Integrated Circuit) package. This package type is designed for compact, efficient integration in electronic circuits.

Pinout

The SIR622DP-T1-GE3 is a dual N-channel MOSFET with a pin count of 8. It is designed for power management applications. The specific pin functions are as follows:
1. Pin 1 (G): Gate of the first N-channel MOSFET (Q1).
2. Pin 2 (S): Source of the first N-channel MOSFET (Q1).
3. Pin 3 (D): Drain of the first N-channel MOSFET (Q1).
4. Pin 4 (G): Gate of the second N-channel MOSFET (Q2).
5. Pin 5 (S): Source of the second N-channel MOSFET (Q2).
6. Pin 6 (D): Drain of the second N-channel MOSFET (Q2).
7. Pin 7 (G): Ground.
8. Pin 8 (D): Drain of the second N-channel MOSFET (Q2).
This configuration allows for efficient switching and control in various electronic applications, including power management and motor control.

Manufacturer

The SIR622DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Founded in 1962, the company specializes in a wide range of products, including resistors, capacitors, inductors, and various semiconductor devices such as diodes and transistors. Vishay serves diverse markets, including automotive, industrial, telecommunications, consumer electronics, and military applications. Their focus on innovation and quality positions them as a significant player in the electronic components industry.

Application

The SIR622DP-T1-GE3 is a dual N-channel MOSFET primarily used in power management applications. Its applications include DC-DC converters, power supplies, battery management systems, and motor drives. Its features, such as low on-resistance and fast switching speeds, make it suitable for efficient power conversion and control in consumer electronics, automotive systems, and industrial equipment.

Equivalent

Equivalent products to the SIR622DP-T1-GE3 include the SIR622DP-T1-GE3 (from Vishay), the IRLML2502 (from Infineon), and the BSS138 (from Nexperia). Check specifications for voltage, current ratings, and package types to ensure compatibility in your application. Always consult datasheets for precise comparisons.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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