SIR466DP-T1-GE3

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SIR466DP-T1-GE3

MOSFET N-CH 30V 40A PPAK SO-8

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  • Mfr. Partie #SIR466DP-T1-GE3
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Spécifications

Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2730 pF @ 15 V
Power Dissipation (Max) 5W (Ta), 54W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR466

Vue d'ensemble

Description

The SIR466DP-T1-GE3 is a high-performance N-channel MOSFET designed for power management applications. It features low on-resistance, enabling efficient switching with minimal power loss. This MOSFET operates at a maximum drain-source voltage (V_DS) of 60V and can handle continuous drain currents up to 60A, making it suitable for high-current applications.
Key specifications include a low gate threshold voltage, which enhances its performance in low-voltage applications. The SIR466DP-T1-GE3 is packaged in a TO-220 format, facilitating effective thermal management.
Its applications range from DC-DC converters, power supplies, motor drivers, and automotive electronics. The device's reliability and efficiency make it a popular choice in both industrial and consumer electronics. Overall, it provides a robust solution for designers seeking high efficiency and thermal performance in their power circuits.

Features

The SIR466DP-T1-GE3 is a high-performance N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Continuous drain current (I_D) capability of 50A.
3. R_DS(on): Low on-resistance (R_DS(on)) typically around 6.5 mΩ, enhancing efficiency and reducing heat generation.
4. Gate Threshold Voltage: Gate-source threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for low-voltage operation.
5. Package Type: Offered in a TO-220 package, facilitating easy heat dissipation and mounting in various applications.
6. Switching Speed: Fast switching capabilities suitable for high-frequency applications.
7. Applications: Commonly used in power management, DC-DC converters, motor control, and power supplies.
This MOSFET is ideal for applications requiring robust performance and efficiency.

Package

The SIR466DP-T1-GE3 is packaged in a PowerPAK® SO-8, which is a surface-mount package designed for efficient thermal performance and compact size.

Pinout

The SIR466DP-T1-GE3 is a high-performance power MOSFET driver, specifically designed for driving N-channel MOSFETs in various applications. It has a pin count of 8.
The functions of the pins are as follows:
1. VDD: Power supply for the driver.
2. GND: Ground connection.
3. IN: Input control signal to turn the MOSFET on/off.
4. OUT: Output signal that drives the gate of the MOSFET.
5. VB: Bootstrap voltage supply for high-side driving.
6. VS: Source voltage for high-side MOSFET.
7. CT: Capacitor terminal for timing or capacitance.
8. RBOOT: Resistor path for bootstrap capacitor charging.
This driver is typically used in applications like DC-DC converters and motor drives, where efficient switching of power MOSFETs is essential.

Manufacturer

The SIR466DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of semiconductors and passive electronic components. Founded in 1962, the company is headquartered in Malvern, Pennsylvania, and is recognized for its extensive product portfolio, which includes diodes, capacitors, resistors, and MOSFETs, among other electronic components. Vishay serves various markets, including automotive, industrial, telecommunications, consumer electronics, and military/aerospace. The company is known for its commitment to innovation and quality, providing solutions that meet the evolving needs of the electronics industry.

Application

The SIR466DP-T1-GE3 is a dual N-channel MOSFET designed for high-efficiency power management applications. Its primary application areas include DC-DC converters, load switches, synchronous rectification, and power distribution in consumer electronics, telecommunications, and industrial equipment. It is suitable for use in battery management systems and power supply circuits due to its low gate threshold voltage and fast switching capabilities.

Equivalent

The SIR466DP-T1-GE3 is a dual N-channel MOSFET driver. Equivalent products include the MIC4427, TC4420, and IRF730. Ensure compatibility by checking specifications like voltage, current ratings, and switching speed. Always refer to manufacturer datasheets for detailed comparisons.

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