SIR416DP-T1-GE3

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SIR416DP-T1-GE3

MOSFET N-CH 40V 50A PPAK SO-8

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 3.8mOhm @ 15A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 90 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3350 pF @ 20 V
PowerDissipation(Max) 5.2W (Ta), 69W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Vue d'ensemble

Description

The SIR416DP-T1-GE3 is a dual N-channel MOSFET designed for high-efficiency applications. It features low on-resistance and fast switching capabilities, making it suitable for power management in various electronic devices, including computing and consumer electronics. The device is housed in a compact DPAK package, which allows for effective thermal dissipation.
Key specifications include a maximum drain-source voltage (V_DS) of 40V, a continuous drain current (I_D) of 50A, and a low R_DS(on) value that enhances performance and efficiency. The SIR416DP-T1-GE3 is also RoHS compliant, ensuring it meets environmental standards.
This MOSFET is widely used in applications such as DC-DC converters, motor drives, and power switches. Its robust design and reliability make it a preferred choice for engineers looking to optimize power efficiency in their electronic designs.

Features

The SIR416DP-T1-GE3 is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: A maximum drain-source voltage (VDS) of 60V, suitable for various applications.
2. Current Rating: Capable of handling continuous drain current (ID) of up to 30A, allowing for strong performance in demanding environments.
3. RDS(on): Low on-resistance (typically around 6.5 mΩ at 10V gate drive), minimizing conduction losses and enhancing efficiency.
4. Gate Threshold Voltage: VGS(th) ranges from 1V to 3V, ensuring compatibility with low-voltage drive circuits.
5. Package Type: Available in a TO-220 package, which provides efficient thermal management.
6. Fast Switching Speed: Enables high-frequency operation, making it suitable for applications such as DC-DC converters, motor drives, and battery management systems.
7. Thermal Resistance: Low thermal resistance for better heat dissipation.
8. Reliability: Designed for robustness, making it suitable for industrial and automotive applications.
These features make the SIR416DP-T1-GE3 ideal for efficient power conversion and management solutions.

Package

The SIR416DP-T1-GE3 is packaged in a SO-8 (Small Outline 8) surface mount package type.

Pinout

The SIR416DP-T1-GE3 is a high-speed MOSFET driver with a pin count of 8. This device is primarily used to drive high-power MOSFETs and IGBTs in various applications, including motor drives, power supplies, and lighting control.
Pin Functions:
1. VDD (Pin 1): Supply voltage for the driver.
2. GND (Pin 2): Ground reference.
3. IN (Pin 3): Input signal to control the gate driver.
4. OUT (Pin 4): Output to drive the gate of the MOSFET or IGBT.
5. VDD (Pin 5): Additional supply input.
6. GND (Pin 6): Additional ground reference.
7. CS (Pin 7): Current sense pin for feedback.
8. NC (Pin 8): No connect, not used.
This configuration allows the SIR416DP-T1-GE3 to effectively control high-speed switching applications with improved efficiency and reduced switching losses.

Manufacturer

The SIR416DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a leading global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company specializes in various products, including resistors, capacitors, inductors, diodes, and MOSFETs, serving multiple industries such as automotive, industrial, consumer electronics, and telecommunications. Vishay is known for its focus on innovation and high-quality components that meet diverse customer needs in the electronics market.

Application

The SIR416DP-T1-GE3 is a dual N-channel MOSFET primarily used in power management applications, including DC-DC converters, power supplies, and motor control. Its features make it suitable for load switching, battery management, and energy-efficient systems in consumer electronics, automotive, and industrial applications.

Equivalent

The SIR416DP-T1-GE3 is a high-side MOSFET driver. Equivalent products include the MIC4427, TC4420, and LM5118, which also provide similar functionalities for driving MOSFETs in high-side configurations. However, always check the specific electrical characteristics and compatibility for your application before substituting.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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